Data Center Challenges and Their Power Electronics

Krein, P.T.

doi:10.24295/cpsstpea.2017.00005

Cited by 74 publications

(21 citation statements)

References 56 publications

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“…As a commercial infrastructure paradigm, cloud computing has revolutionized the IT industry [1,2]. However, the energy consumption of cloud computing shows a rising trend, while the resources themselves are highly underutilized [3,4]. This presents a bottleneck that restricts the improvement of cloud computing and reveals the great importance of greening the networks.…”

Section: Introductionmentioning

confidence: 99%

Performance Evaluation and Social Optimization of an Energy-Saving Virtual Machine Allocation Scheme Within a Cloud Environment

Wang

Zhu

Jin

et al. 2019

J. Oper. Res. Soc. China

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Achieving greener cloud computing is non-negligible for the open-source cloud platform. In this paper, we propose a novel virtual machine allocation scheme with a sleep-delay and establish a corresponding mathematical model. Taking into account the number of tasks and the state of the physical machine, we construct a two-dimensional Markov chain and derive the average latency of tasks and the energy-saving degree of the system in the steady state. Moreover, we provide numerical experiments to show the effectiveness of the proposed scheme. Furthermore, we study the Nash equilibrium behavior and the socially optimal behavior of tasks and carry out an improved adaptive genetic algorithm to obtain the socially optimal arrival rate of tasks. Finally,

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Section: Introductionmentioning

confidence: 99%

Performance Evaluation and Social Optimization of an Energy-Saving Virtual Machine Allocation Scheme Within a Cloud Environment

Wang

Zhu

Jin

et al. 2019

J. Oper. Res. Soc. China

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“…To theoretically analyse the circuit operation, the following assumptions should be made: The converter operates in steadystate and in continuous conduction mode (CCM), the inductor values 4 , C a and C b ) are considered large enough so that their voltage values remain approximately constant within a switching period and, finally, all active and passive devices are considered ideal (zero conduction and switching losses, zero voltage drop). The different conduction states within a switching cycle are shown in Figure 2.…”

Section: Operating Principles Of the Convertermentioning

confidence: 99%

“…Nowadays, step-down DC-DC converters have gained and increased interest, due to their employment in various applications such as battery chargers, LED lamp drivers but more importantly, as power supplies in automotive industry, IoT devices, data centres and power-over-tether systems [1][2][3][4][5][6][7][8][9][10]. In hybrid and electric vehicles, where the battery pack voltage value is increasing due to the use of highly efficient permanent magnet synchronous motors (PMSM) motors [11,12], the use of high step-down voltage ratio DC-DC converters is imperative for present and future applications [6].…”

Section: Introductionmentioning

confidence: 99%

A non‐isolated DC‐DC converter with low voltage stress and high step‐down voltage conversion ratio

Syrigos

Christidis

Mouselinos

et al. 2021

IET Power Electronics

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This work focuses on a new non-isolated interleaved DC-DC converter with very high step-down voltage conversion ratio. By employing the switched/series capacitor concept, along with the proper component interconnection, the converter features a high step-down voltage conversion ratio where, in the private case of equal duty ratios, it is six times higher than the conventional buck converter. This high step-down voltage conversion ratio is achieved with the lowest number of components compared to other similar topologies of the same conversion ratio. Also, due to the blocking/series capacitors, the voltage stress on the switches is reduced, improving the converter efficiency. One of the key features of the proposed converter is the inherent automatic current sharing between the interleaved phases, which in the case of equal duty ratios, is uniformly distributed. To add on, due to the use of only two interleaved phases, the converter has a wide output voltage range, since the duty cycle can be extended to 0.5. To validate the proposed converter operation, a 250 W wide-input/wide-output experimental prototype was built, achieving a peak efficiency of 94%. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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“…The data centers account for over 1.5% of the electricity usage in the US and China. 108 GaN power devices are expected to push the limits of efficiency and power density to support highperformance applications. Recent research shows GaN power transistors excel in performance compared to their Si-based counterparts.…”

Section: Gan Power Applicationsmentioning

confidence: 99%

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Kim

Zhang

et al. 2020

Journal of Elec Materi

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Gallium nitride (GaN) power transistors have attracted significant interest in the power electronics industry over the past decade as the next-generation power semiconductor devices. GaN power transistors are suitable for high power and high frequency applications due to their higher electron mobility, temperature tolerance, electrical conductivity, critical breakdown electric field, and breakdown voltage compared to the conventional silicon-based transistors and other wide bandgap (WBG) power transistors. In particular, GaN-on-silicon (GaN-on-Si) technology has opened up the possibility of manufacturing high-performance, low-cost WBG power devices in silicon-compatible fabrication facilities. The first GaN power transistor structure to be developed was the normally-ON depletion mode (D-mode) device. It relies on the highly mobile two-dimension electron gas (2DEG) at the GaN/AlGaN epitaxial layers' interface to provide very low on-resistance. The normally-OFF enhancement mode (E-mode) GaN power transistor soon became available by controlling the 2DEG using various gate structures. This paper provides a review of the developments of GaN power transistors followed by a survey on current state-of-the-art GaN power technologies and applications, including comparisons between GaN growth substrates and developments of enhancement mode (E-mode) device structures and their process techniques. Moreover, developments of power module designs are also addressed, including gate driver designs and their requirements, and packaging techniques for power transistors and power modules.

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Data Center Challenges and Their Power Electronics

Cited by 74 publications

References 56 publications

Performance Evaluation and Social Optimization of an Energy-Saving Virtual Machine Allocation Scheme Within a Cloud Environment

Performance Evaluation and Social Optimization of an Energy-Saving Virtual Machine Allocation Scheme Within a Cloud Environment

A non‐isolated DC‐DC converter with low voltage stress and high step‐down voltage conversion ratio

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

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