DC and high-frequency characteristics of GaN-based IMPATTs

Панда, А. К.; Pavlidis, D.; Alekseev, E.

doi:10.1109/16.915735

Cited by 53 publications

(25 citation statements)

References 11 publications

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“…But some recent theoretical study reveals the potentiality of InP-based IMPATTs as THz sources . In recent years the potentiality of wide bandgap materials (SiC, GaN) for generation of RF power at THz frequencies has been reported Mukherjee et al 2009;Panda et al 2007Panda et al , 2001; Banerjee et al 2010). Yuan et al (2001) first demonstrated the 4H-SiC based p ?…”

Section: Introductionmentioning

confidence: 99%

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Acharyya

Banerjee

2012

Appl Nanosci

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In this paper the potentiality of impact avalanche transit time (IMPATT) devices based on different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz-GaN) has been explored for operation at terahertz frequencies. Drift-diffusion model is used to design double-drift region (DDR) IMPATTs based on different materials at millimeter-wave (mm-wave) and terahertz (THz) frequencies. The performance limitations of these devices are studied from the avalanche response times at different mm-wave and THz frequencies. Results show that the upper cut-off frequency limits of GaAs and Si DDR IMPATTs are 220 GHz and 0.5 THz, respectively, whereas the same for InP and 4H-SiC DDR IMPATTs is 1.0 THz. Wz-GaN DDR IMPATTs are found to be excellent candidate for generation of RF power at THz frequencies of the order of 5.0 THz with appreciable DC to RF conversion efficiency. Further, it is observed that up to 1.0 THz, 4H-SiC DDR IMPATTs excel Wz-GaN DDR IMPATTs as regards their RF power outputs. Thus, the wide bandgap semiconductors such as Wz-GaN and 4H-SiC are highly suitable materials for DDR IMPATTs at both mm-wave and THz frequency ranges.

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Section: Introductionmentioning

confidence: 99%

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Acharyya

Banerjee

2012

Appl Nanosci

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“…A complete theoretical study of SiC IMPATT and MITATT (MIxed Avalanche Transit Time) devices accounting for all SiC features is of interest at this point to evaluate their potential and most promising designs in support of ongoing and future experimental attempts which has not been represented by any group till now (to the author's knowledge). Further, it is seen from [1,2] that high band gap semiconductors like GaN produces more noise compare to traditional IMPATTs. Hence, the noise analysis of all such poly structures is also important at this juncture to show the potentiality of SiC as the material of choice for IMPATTs.…”

Section: Introductionmentioning

confidence: 96%

“…In the modern trend, research activities are focused on the search of the best suited base semiconductor material, which would give high efficiency, high microwave power and low noise. Apart from low band gap semiconductor materials such as Si (IVth group elements) GaAs (III-Vth compound semiconductors) and its compound/alloy heterostructure material, wide band gap semiconductors like SiC, GaN and compounds based on it have recently been established as technologically important materials for both electronic and optoelectronic devices [1][2][3][4][5]. The feasibility of using GaN for IMPATT devices has been seen recently [1,2] in the literature.…”

Section: Introductionmentioning

confidence: 99%

“…Apart from low band gap semiconductor materials such as Si (IVth group elements) GaAs (III-Vth compound semiconductors) and its compound/alloy heterostructure material, wide band gap semiconductors like SiC, GaN and compounds based on it have recently been established as technologically important materials for both electronic and optoelectronic devices [1][2][3][4][5]. The feasibility of using GaN for IMPATT devices has been seen recently [1,2] in the literature. Some theoretical as well as experimental results on SiC-based IMPATTs are also seen recently in the literature [6,7].…”

Section: Introductionmentioning

confidence: 99%

“…The Impact Avalanche Transit Time (IMPATT) diodes are considered to be more powerful solid state sources operating in the mm-wave and sub-mm wave frequencies and are widely used in various communication systems [1][2]. In the modern trend, research activities are focused on the search of the best suited base semiconductor material, which would give high efficiency, high microwave power and low noise.…”

Section: Introductionmentioning

confidence: 99%

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Modeling and comparative study on the high frequency and noise characteristics of different polytypes of SiC- based IMPATTs

Панда

Rao

2009

2009 Asia Pacific Microwave Conference

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SiC-based IMPATTs with its different polytypes (3C, 4H, and 6H) are modeled, designed and a comparative study among three are presented in this paper to operate at D-band frequency at the same operating conditions and frequency of operations under static and dynamic conditions. A noise analysis model was also developed to compare the noise characteristics of 3C, 4H and 6H SiC-based IMPATTs. The results show that 3C-SiC based IMPATTs have better power delivery capability whereas 4H SiC-based IMPATTs are less noisy. Hence a noise-power trade-off method is used to determine the potential of each polytypes of SiC-based IMPATTs.

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