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Electrical characterization of AlN/GaN interfaces was carried out by the capacitance-voltage (C-V) technique in materials grown by metalorganic chemical vapor deposition. The high-frequency C-V characteristics showed clear deep-depletion behavior at room temperature, and the doping density derived from the slope of 1/C 2 plots under the deep depletion condition agreed well with the growth design parameters. A low value of interface state density D it of 1 ϫ10 11 cm Ϫ2 eV Ϫ1 or less around the energy position of E c Ϫ0.8 eV was demonstrated, in agreement with an average D it value estimated from photoassisted C-V characteristics.

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