dc and low frequency noise analysis of Fowler–Nordheim stress of n-channel metal-oxide semiconductor field-effect transistors processed in a 65nm technology

Armand, J.; Mart́ınez, F.; Benoit, Patrice; Valenza, M.; Huard, V.; Rochereau, K.

doi:10.1116/1.3130166

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

2009

DOI: 10.1116/1.3130166

|View full text |Cite

dc and low frequency noise analysis of Fowler–Nordheim stress of n-channel metal-oxide semiconductor field-effect transistors processed in a 65nm technology

J. Armand

F. Mart́ınez

Patrice Benoit

et al.

Abstract: Articles you may be interested inEffect of mechanical strain on 1 / f noise in metal-oxide semiconductor field-effect transistors

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2021

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors

Nguyen

et al. 2021

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

Individual charge traps in the gate stack of gate-all-around field-effect-transistors have been identified from their random telegraph noise (RTN) characteristics in the time and frequency domains. The energy level and depth location of the corresponding charge traps were extracted from capture/emission time constant and corner frequency. The charge traps were determined to be the excited states of oxygen vacancies in the dielectric located 3 nm away from the interface. Both the time domain and frequency domain RTN measurements lead to an identical result.

show abstract

Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors

Nguyen

et al. 2021

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

dc and low frequency noise analysis of Fowler–Nordheim stress of n-channel metal-oxide semiconductor field-effect transistors processed in a 65nm technology

Abstract: Articles you may be interested inEffect of mechanical strain on 1 / f noise in metal-oxide semiconductor field-effect transistors

Cited by 1 publication

References 6 publications

Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors

Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors

Contact Info

Product

Resources

About