DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures

Zeng, Bolun; Zhang, Haochen; Luo, Chao; Xiang, Zikun; Zhang, Yuanke; Weng, Mingjie; Xue, Qian; Hu, Sirui; Sun, Yue; Yang, Lei; Sun, Haiding; Guo, Guo-Ping

doi:10.1088/1361-6463/ac89fc

Cited by 14 publications

(9 citation statements)

References 38 publications

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“…Comparison curves of the mobility model (solid lines) with experimental data (symbols) at different temperature ranges: a) low temperatures [ 41,45 ] and b) high temperatures. [ 46 ] …”

Section: Model Descriptionmentioning

confidence: 99%

“…The fitting results of the I – V model and the measured data of GaN HEMT on the GaN‐on‐sapphire template in ref. [45] are shown in Figure . Figure 5a shows the transfer characteristic curves in linear and semi‐logarithmic coordinates over the temperature range of 4.2–300 K (−268.8–27 °C), and it can be found that as the temperature changes from 300 to 4.2 K, the electrical performance of the device improves significantly, with a significant increase in saturation current and a steeper sub‐threshold swing.…”

Section: Model Verification and Analysismentioning

confidence: 99%

“…Measurement [ 45 ] (symbols) and simulated (solid lines) of the drain‐source current at temperatures of 4.2–300 K: a) I ds – V gs curves at V ds = 0.5 V, b) and c) I ds – V ds curves at temperatures of 4.2 and 300 K, respectively, with V gs = −4–1 V (steps of 1 V), d) comparison curves of I ds at 4.2 and 300 K for V gs = 1 V.…”

Section: Model Verification and Analysismentioning

confidence: 99%

“…As shown in Figure 3, the mobility model shown in Equation ( 12) is verified by the measurements at different temperatures in refs. [41,45,46].…”

Section: Charge Transportationmentioning

confidence: 99%

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An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

Wu,

Yao,

Liu

et al. 2024

Physica Status Solidi (a)

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In this work, an extended temperature current–voltage (I–V) model for AlGaN/GaN high electron mobility transistors (HEMTs) is proposed. Since there is no carrier freeze‐out effect in GaN HEMTs, the current density, switching characteristics, and heat dissipation performance are significantly improved with the decrease in temperature. The threshold voltage drift phenomenon can be accurately described at various temperatures by the trapping effect control potential model. Based on Matthiessen's law, the applicable temperature range of the mobility model is further extended. At cryogenic temperatures, the saturation current, saturation velocity, and sub‐threshold swing of the device tend to saturate as well as be temperature‐independent, which can be accurately modeled by using the equivalent temperature and applying the crucial temperature to quantify the turning point. Furthermore, the SHE modeling incorporates the temperature dependence of the material's thermal conductivity. The accuracy of the model is verified by experimental data at low (4.2–300 K) and high (298–773 K) temperatures. The proposed model overcomes the limitations of existing models applied at wide ambient temperatures.

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“…Comparison curves of the mobility model (solid lines) with experimental data (symbols) at different temperature ranges: a) low temperatures [ 41,45 ] and b) high temperatures. [ 46 ] …”

Section: Model Descriptionmentioning

confidence: 99%

Section: Model Verification and Analysismentioning

confidence: 99%

Section: Model Verification and Analysismentioning

confidence: 99%

“…As shown in Figure 3, the mobility model shown in Equation ( 12) is verified by the measurements at different temperatures in refs. [41,45,46].…”

Section: Charge Transportationmentioning

confidence: 99%

See 2 more Smart Citations

An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

Wu,

Yao,

Liu

et al. 2024

Physica Status Solidi (a)

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“…* Author to whom any correspondence should be addressed. two-dimensional electron gases (2DEGs) at the AlGaN/GaN hetero-interface [4][5][6]. As a result, such devices have emerged as competitive candidates in various applications such as electric vehicles, wireless communication, data centre, etc [7].…”

Section: Introductionmentioning

confidence: 99%

Normally-OFF AlGaN/GaN-based HEMTs with decreasingly graded AlGaN cap layer

Xing¹,

Zhang²,

Sun³

et al. 2022

J. Phys. D: Appl. Phys.

Self Cite

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In this work, an E-mode AlGaN/GaN-based HEMTs with a graded AlGaN cap layer (GACL) is proposed and numerically studied by Silvaco TCAD. The GACL is designed with a decreasingly graded Al composition x along [0001] direction and the initial x is smaller than the Al composition of the Al0.2Ga0.8N barrier layer (BL). This GACL scheme can simultaneously produce high-concentration polarization-induced holes and negative net polarization charges at the GACL/BL interface. This can facilitate the separation of the conduction band and Fermi level at the 2DEG channel and therefore benefit the normally-OFF operation of the device. The optimized graded-AlGaN-gated (GAG) metal-semiconductor (MES) HEMT can achieve a large threshold voltage of 4 V. Furthermore, we demonstrated that shortening the gate length on the GACL and inserting an oxide layer between the gate and GACL can be both effective to suppress gate leakage current, enhance gate voltage swing, and improve on-state drain current of the device. These numerical investigations can provide insights into the physical mechanisms and structure innovations of the E-mode GaN-based HEMTs of the future.

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Superior AlGaN/GaN‐Based Phototransistors and Arrays with Reconfigurable Triple‐Mode Functionalities Enabled by Voltage‐Programmed Two‐Dimensional Electron Gas for High‐Quality Imaging

Zhang,

Liang,

Yang

et al. 2024

Advanced Materials

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High‐quality imaging units are indispensable in modern optoelectronic systems for accurate recognition and processing of optical information. To fulfill massive and complex imaging tasks in digital age, devices with remarkable photoresponsive characteristics and versatile reconfigurable functions on a single device platform are in demand but remain challenging to fabricate. We report an AlGaN/GaN‐based double‐heterostructure, incorporated with a unique compositionally graded AlGaN structure to generate a channel of polarization‐induced two‐dimensional electrons that can be modulated to control electron separation, collection, and storage process in the channel of the fabricated phototransistor. As a result, when exposed to different light sources, the device shows reconfigurable multifunctional photoresponsive behaviors with superior characteristics owing to the successful programming of the 2DEGs by the combined gate and drain voltage inputs. A self‐powered mode with a responsivity over 100 A/W and a photoconductive mode with a responsivity of ∼108 A/W were achieved, with the ultimate demonstration of a 10×10 device array for imaging. More intriguingly, the device can be switched to photoelectric synapse mode, emulating synaptic functions to denoise the imaging process while prolonging the image storage capability. Demonstrating three‐in‐one operational characteristics in a single device offers a new path toward future integrated and multifunctional imaging units.This article is protected by copyright. All rights reserved

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DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures

Cited by 14 publications

References 38 publications

An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

Normally-OFF AlGaN/GaN-based HEMTs with decreasingly graded AlGaN cap layer

Superior AlGaN/GaN‐Based Phototransistors and Arrays with Reconfigurable Triple‐Mode Functionalities Enabled by Voltage‐Programmed Two‐Dimensional Electron Gas for High‐Quality Imaging

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