DC and RF characteristics optimization of AlGaN/GaN/BGaN/GaN/Si HEMT for microwave-power and high temperature application

Gassoumi, Moujahed; Helali, Abdelhamid; Maâref, H.; Gassoumi, M.

doi:10.1016/j.rinp.2018.11.063

Cited by 21 publications

(9 citation statements)

References 18 publications

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“…So far, the beneficial influence of BGaN backbarrier on AlGaN/GaN HEMTs due to the enhancement of the two-dimensional electron gas confinement has been reported. [1][2][3][4] Additionally, a decreased value of the refractive index for BGaN compared to GaN was reported, making the BGaN/GaN multilayer structures candidates for distributed Bragg reflectors. 5,6 BGaN alloys with specific B content are also thought to have a beneficial influence on GaN-based optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Boron influence on bandgap and photoluminescence in BGaN grown on AlN

Zdanowicz

Iida

Pawlaczyk

et al. 2020

Journal of Applied Physics

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Since the BGaN alloy is considered a promising material in the wide range of optoelectronic applications, a detailed study of its band structure and optical properties is highly demanded. Here, B x Ga 1Àx N layers with 0.5%, 1.1%, and 1.2% B were grown by metalorganic vapor-phase epitaxy on AlN/sapphire templates and investigated by structural and optical methods. The bandgaps of the investigated alloys were examined by contactless electroreflectance (CER) spectroscopy. Because no GaN layer is present in the investigated samples, the detected CER resonances do not overlap with the GaN-related signal, which is typical for BGaN layers grown on GaN templates. Thus, the energy of the bandgap-related transition in BGaN samples can be unambiguously determined from the resonances observed in the CER spectra. The boron-induced redshift of the bandgap was determined to be about 60 meV/% B for the studied samples. By means of photoluminescence measurements, the deteriorating optical quality of samples with increasing boron content is shown as the decreasing bandgapto defect-related emission intensity ratio. What is more, the defect-related emission is shifted from typical for GaN yellow range to the red and is located at 1.9 eV for all BGaN samples.

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Section: Introductionmentioning

confidence: 99%

Boron influence on bandgap and photoluminescence in BGaN grown on AlN

Zdanowicz

Iida

Pawlaczyk

et al. 2020

Journal of Applied Physics

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“…The device architectures in Fig. 7 are biased at maximum device transconductance (g m(max) ) on similar lines as in [50]. It is observed that the stern stability factor Sehra et al in their earlier work [37] discuss about the enhanced gate action in case of recessed π -Gate architectures.…”

Section: Resultsmentioning

confidence: 70%

“…To complement this study, a comparison between the DUTs on the basis of stern stability factor follows naturally, as it determines the suitability of a particular device architecture for a stable high frequency operation [50]. These results are presented in Fig.…”

Section: Resultsmentioning

confidence: 99%

Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

Sehra

Kumari

Gupta

et al. 2020

Silicon

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This paper presents a comprehensive TCAD based assessment to evaluate the intrinsic gain and minimum noise figure metrics of the T -Gate, and the π -Gate AlGaN/AlN/GaN HEMTs along with their recessed architectures. The work presented in this paper, to the best of author's knowledge, is first in its attempt to systematically bring out both the effect of minimum noise figure metrics and intrinsic gain at the device level for the π -Gate architecture and their recessed counterparts whilst evaluating its stability for high frequency operations. Comparison demonstrates an enhancement in intrinsic gain by 64.5% in case of asymmetric π -Gate and 77% for asymmetric recessed π -Gate in comparison to their T -Gate counterparts. Further, the said architectures possess a wider range of flat gain operation with suppressed values of minimum noise figure metrics. These modifications result in a modest trade off in the minimum noise figures when best case is considered and compared with their T -Gate counterparts. Additionally, it is also demonstrated that such device architectures demonstrate much stable high frequency operation in comparison to their primer. The results so presented establish the superiority of the π -Gate AlGaN/ AlN/GaN HEMTs for low noise and high gain applications.

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“…In order to validate our proposed structures, we compare our output characteristic simulation results as shown in Figure 4 with output characteristic simulation results reported by [32] in Figure 5 of single channel HEMT with BGaN back-barriers. Clearly, from Figures 4 and 5 and for all gate-source voltage, we observed a good similarity between our simulations results and the simulation results of [32]. Figures 6 and 7 shows output current-voltage (I-V) characteristics for double-channel HEMT and double-gate double channel HEMT with BGaN back-barriers, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…The proposed devices structures which are analyzed and simulated using Atlas of Silvaco TCAD software [31], along with the devices dimensions and material of various layers used is presented in Figure 1 and Figure 2. The conventional structure of simple-gate simple-channel (SGSC) HEMT with BGaN back barriers is reported by Gassoumi et al [32]. In this work, the gate(s) length of the proposed devices structures of both simulated SGDC HEMT and DGDC HEMT with BGaN back barriers is 250 nm, the structures consists of silicon as substrate, an undoped AlN/AlGaN buffer layer with a thickness of 500 nm, followed by a 1800 nm undoped GaN channel, a 23 nm thickness of undoped Al0.26Ga0.74N barrier layer.…”

Section: Proposed Devices Structuresmentioning

confidence: 99%

Numerical investigation of the performance of AlGaN/GaN/BGaN double-gate double-channel high electron mobility transistor

Djelti

2022

IJECE

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<p><span>In this work, we examine the direct-current (DC) behavior and the radio-frequency (RF) performance of both single-gate simple-channel (SGSC), single-gate double-channel (SGDC) and double-gate double-channel (DGDC) AlGaN/GaN/BGaN high electron mobility transistor (HEMT) with BGaN back-barriers consist of 250 nm gate length. Using Technologie Computer Aided Design (TCAD) Silvaco, our isothermal simulation results reveal that the proposed structure of double-gate double-channel HEMT with BGaN back-barriers (DGDCBB HEMT) increases electron concentration and consequently the saturation drain current, breakdown voltage, the transconductance. On the other hand, decreases the gate leakage current compared to a conventional HEMT and to a double-channel HEMT back-barriers. Furthermore, the proposed double-gate double-channel back-barrier HEMT device shows good cutoff frequency (94 GHz) and a maximum oscillation frequency (170 GHz). These results suggest that double-gate double channel HEMT back-barriers could be useful for high-frequency and high-power microwave applications.</span></p>

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DC and RF characteristics optimization of AlGaN/GaN/BGaN/GaN/Si HEMT for microwave-power and high temperature application

Cited by 21 publications

References 18 publications

Boron influence on bandgap and photoluminescence in BGaN grown on AlN

Boron influence on bandgap and photoluminescence in BGaN grown on AlN

Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

Numerical investigation of the performance of AlGaN/GaN/BGaN double-gate double-channel high electron mobility transistor

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