DC electric and photoelectric measurements of CdTe thin films in Schottky-barrier cells

Characterization of vacuum evaporated CdTe thin films prepared at ambient temperature

“…Also it is close to the value calculated by Ubale et al [21] (22 nm) for CdTe thin films prepared by chemical deposition method: successive ionic layer adsorption and reaction (SILAR). But our value of grain size is smaller than the values obtained by Darwish [18], which ranged between 79 and 125 nm for thermal evaporated CdTe thin films. The reason of this large difference is that our films were prepared at ambient temperature, while those of Darwish [18] were prepared at 670 K; it is well known that grain size increases with deposition temperature.…”

“…But our value of grain size is smaller than the values obtained by Darwish [18], which ranged between 79 and 125 nm for thermal evaporated CdTe thin films. The reason of this large difference is that our films were prepared at ambient temperature, while those of Darwish [18] were prepared at 670 K; it is well known that grain size increases with deposition temperature. Fig.…”

“…Physical techniques include close space sublimation (CSS) [4,8], molecular beam epitaxy (MBE) [9], r.f sputtering [10], electrodeposition [11][12][13], pulsed laser deposition (PLD) [14][15], and thermal evaporation [2,6,[16][17][18]. Chemical techniques include metal organic chemical vapor deposition (MOCVD) [19], chemical bath deposition (CBD) [20], successive ionic layer adsorption and reaction method (SILAR) [21][22], and spray pyrolysis [12,23,24].…”

Structural and Electrical Characterization of the CdTe/SnO2 Heterojunction for Solar Cell Application

“…This large n value can be explained in terms of the interface states and series resistance. The obtained n value suggests that the charge transport mechanism is controlled by recombination in the space charge region [16].…”

Numerical study of metal oxide Schottky type solar cells

“…As an alternative to p/n junction solar cells, Metal/Semiconductor (MS) and its deviated structure of Metal/Insulator/Semiconductor (MIS) Schottky barrier solar cells are often used for fabricating solar cells owing to their simple structure and fabrication process, limited problems from the interface states for heterostructure introduced by semiconductor lattice mismatch etc, low temperature processing and reasonably good efficiencies [18][19][20][21][22][23][24][25]. Various designs of Schottky diode structures and the effects of each semiconductor layer, metal electrode and electrode pattern on the performances have been systematically studied and explored for various material systems [26][27][28].…”