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There is an urgent requirement for an optical emitter that is compatible with standard, silicon-based ultra-large-scale integration (ULSI) technology. Bulk silicon has an indirect energy bandgap and is therefore highly inefficient as a light source, necessitating the use of other materials for the optical emitters. However, the introduction of these materials is usually incompatible with the strict processing requirements of existing ULSI technologies. Moreover, as the length scale of the devices decreases, electrons will spend increasingly more of their time in the connections between components; this interconnectivity problem could restrict further increases in computer chip processing power and speed in as little as five years. Many efforts have therefore been directed, with varying degrees of success, to engineering silicon-based materials that are efficient light emitters. Here, we describe the fabrication, using standard silicon processing techniques, of a silicon light-emitting diode (LED) that operates efficiently at room temperature. Boron is implanted into silicon both as a dopant to form a p-n junction, as well as a means of introducing dislocation loops. The dislocation loops introduce a local strain field, which modifies the band structure and provides spatial confinement of the charge carriers. It is this spatial confinement which allows room-temperature electroluminescence at the band-edge. This device strategy is highly compatible with ULSI technology, as boron ion implantation is already used as a standard method for the fabrication of silicon devices.

Understanding the fundamental properties of buried interfaces in perovskite photovoltaics is of paramount importance to the enhancement of device efficiency and stability. Nevertheless, accessing buried interfaces poses a sizeable challenge because of their non‐exposed feature. Herein, the mystery of the buried interface in full device stacks is deciphered by combining advanced in situ spectroscopy techniques with a facile lift‐off strategy. By establishing the microstructure–property relations, the basic losses at the contact interfaces are systematically presented, and it is found that the buried interface losses induced by both the sub‐microscale extended imperfections and lead‐halide inhomogeneities are major roadblocks toward improvement of device performance. The losses can be considerably mitigated by the use of a passivation‐molecule‐assisted microstructural reconstruction, which unlocks the full potential for improving device performance. The findings open a new avenue to understanding performance losses and thus the design of new passivation strategies to remove imperfections at the top surfaces and buried interfaces of perovskite photovoltaics, resulting in substantial enhancement in device performance.

Three‐dimensional (3D) metal‐halide perovskite solar cells (PSCs) have demonstrated exceptional high efficiency. However, instability of the 3D perovskite is the main challenge for industrialization. Incorporation of some long organic cations into perovskite crystal to terminate the lattice, and function as moisture and oxygen passivation layer and ion migration blocking layer, is proven to be an effective method to enhance the perovskite stability. Unfortunately, this method typically sacrifices charge‐carrier extraction efficiency of the perovskites. Even in 2D–3D vertically aligned heterostructures, a spread of bandgaps in the 2D due to varying degrees of quantum confinement also results in charge‐carrier localization and carrier mobility reduction. A trade‐off between the power conversion efficiency and stability is made. Here, by introducing 2D C6H18N2O2PbI4 (EDBEPbI4) microcrystals into the precursor solution, the grain boundaries of the deposited 3D perovskite film are vertically passivated with phase pure 2D perovskite. The phases pure (inorganic layer number n = 1) 2D perovskite can minimize photogenerated charge‐carrier localization in the low‐dimensional perovskite. The dominant vertical alignment does not affect charge‐carrier extraction. Therefore, high‐efficiency (21.06%) and ultrastable (retain 90% of the initial efficiency after 3000 h in air) planar PSCs are demonstrated with these 2D–3D mixtures.

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