The highest power conversion efficiencies (PCEs) reported for perovskite solar cells (PSCs) with inverted planar structures are still inferior to those of PSCs with regular structures, mainly because of lower open-circuit voltages (). Here we report a strategy to reduce nonradiative recombination for the inverted devices, based on a simple solution-processed secondary growth technique. This approach produces a wider bandgap top layer and a more n-type perovskite film, which mitigates nonradiative recombination, leading to an increase in by up to 100 millivolts. We achieved a high of 1.21 volts without sacrificing photocurrent, corresponding to a voltage deficit of 0.41 volts at a bandgap of 1.62 electron volts. This improvement led to a stabilized power output approaching 21% at the maximum power point.

Photovoltaic solar cells based on metal halide perovskites have gained considerable attention over the past decade because of their potentially low production cost, earth-abundant raw materials, ease of fabrication and ever-increasing power conversion efficiencies of up to 25.2%. This type of solar cells offers the promise of generating electricity at a more competitive unit price than traditional fossil fuels by 2035.Nevertheless, the best research cell efficiencies are still below the theoretical limit defined by the Shockley-Queissier theory owing to the presence of non-radiative recombination losses. In this Review, we analyse the predominant pathways that contribute to nonradiative recombination losses in perovskite solar cells, and evaluate their impact on device performance. We then discuss how non-radiative recombination losses can be estimated through reliable characterization techniques, and highlight some notable advances in mitigating these losses, which hint at pathways towards defect-free perovskite solar cells.

Understanding the fundamental properties of buried interfaces in perovskite photovoltaics is of paramount importance to the enhancement of device efficiency and stability. Nevertheless, accessing buried interfaces poses a sizeable challenge because of their non‐exposed feature. Herein, the mystery of the buried interface in full device stacks is deciphered by combining advanced in situ spectroscopy techniques with a facile lift‐off strategy. By establishing the microstructure–property relations, the basic losses at the contact interfaces are systematically presented, and it is found that the buried interface losses induced by both the sub‐microscale extended imperfections and lead‐halide inhomogeneities are major roadblocks toward improvement of device performance. The losses can be considerably mitigated by the use of a passivation‐molecule‐assisted microstructural reconstruction, which unlocks the full potential for improving device performance. The findings open a new avenue to understanding performance losses and thus the design of new passivation strategies to remove imperfections at the top surfaces and buried interfaces of perovskite photovoltaics, resulting in substantial enhancement in device performance.