Dc electrical conductivity of ultrathin AgSiO superlattices

Abstract

Ultrathin multilayer structures of successive silver and silicon monoxide layer pairs are prepared using evaporation techniques. Small angle X-ray diffraction and multiple reflection interferometric techniques are used to establish the identity periods of samples. A review of the electrical properties is presented. Both applied voltage and thermally induced resistance switching are observed. These phenomena are described from an empirical vantage. Mittels Aufdampftechnik werden ultradunne Mehrschichtstrukturen von aufeinanderfolgendenSilber-und Siliziummonoxidschichtpaaren prapariert. Rontgen-Kleinwinkelbeugung und Mehrfachreflexions-Interferometertechnik werden benutzt, um die identischen Perioden der Proben festzustellen. Eine Ubersicht der elektrischen Eigenschaften wird angegeben. Sowohl durch LuBere Spannung als auch thermisch induziertes Widerstandumschalten wird beobachtet. Diese Erscheinung wird vom empirischen Standpunkt aus beschrieben.

The Basic Optical Properties, Optical Constants and Optical Conductivity of Bismuth Single Thin Films and Bismuth–Copper Bilayer Systems

“…Moreover, the possible creation of surface states at the interface and band bending of the band structure due to mismatch of Fermi surfaces, also at the interface [9,11], may all contribute to the dielectric±metallic behavior change of the system. Band bending between the two layers, metallic and semimetallic, here may be considered a demagnified version of that believed to take place between a metal and a dielectric, already discussed [11]. All of these factors influence, one way or another, an e.m. wave incident on the surface of the layer system under investigation.…”