IEEE Trans. Electron Devices
 2001
DOI: 10.1109/16.974699
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DC pulse hot-carrier-stress effects on gate-induced drain leakage current in n-channel MOSFETs

Ja-Hao Chen
1
,
Shyh-Chyi Wong
2
,
Yeong-Her Wang
3
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Cited by 4 publications
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References 55 publications
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Comparison of hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxide under an alternating stress

Chen
1
,
Ma
2
,
Cao
3
et al. 2007
Chinese Phys.
1
0
0
0
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Comparison of hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxide under an alternating stress

Chen
1
,
Ma
2
,
Cao
3
et al. 2007
Chinese Phys.
1
0
0
0
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Hot-carrier stress effects on gate-induced-drain leakage current in n-channel MOSFETs studied by hydrogen/deuterium isotope effect

Cheng
1
,
Lyding
2
2003
IEEE Electron Device Lett.
7
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2
0
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Effect of OFF-State Stress on Gate-Induced Drain Leakage by Interface Traps in Buried-Gate FETs

Lee
1
,
Kim
2
,
Yoo
3
et al. 2019
IEEE Trans. Electron Devices
8
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3
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