Effect of OFF-State Stress on Gate-Induced Drain Leakage by Interface Traps in Buried-Gate FETs

Recovery of off-state stress-induced damage in FET-type gas sensor using self-curing method

“…To improve the SNR degradation, the method to recover the damage originating from the OSS should be provided. Previous studies reported that the damage induced by the OSS can be cured by the thermal annealing [ 16 ]. However, the problem is that conventional thermal annealing using external equipment, including a furnace cannot be employed to repair OSS-caused damage because the heat treatment is difficult after being integrated on the system board.…”

“…However, the reliability of the sensor is influenced not only by the sensing material (MOX), but also by the transducer of the sensor [12][13][14]. In particular, when configuring a sensitive amplifier circuit with n-and p-channel FETtype (nFET and pFET) gas sensors, the nFET-type gas sensor is exposed to iterative off-state stress (OSS) during the circuit operation [15][16][17]. When the input signal of the sensing amplifier circuit is low, the OSS is applied to the nFET (V G = GND, V D = V DD , V S = GND, V B = GND), as shown in Fig.…”

Designing buried-gate InGaZnO transistors for high-yield and reliable switching characteristics

“…Enhanced performance of buried-gate transistors was achieved in previous reports. [16][17][18][19] Various electronics devices such as barristers, dynamic random access memory, and tunnel field effect transistors have employed the buried-gate structure with stable operation and electrical performance improvements. Nevertheless, systematic investigation of the buried IGZO transistor has been rarely studied in terms of statistical device-to-device uniformity, yield margin, and electrical stress immunity as well as basic electrical characteristics of the single device.…”