Lateral profiling of gate dielectric damage by off-state stress and positive-bias temperature instability

Lee, Geon‐Beom; Kim, Choong‐Ki; Bang, Tewook; Yoo, Min-Soo; Choi, Yang‐Kyu

doi:10.1016/j.microrel.2021.114383

Cited by 1 publication

(1 citation statement)

References 17 publications

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“…However, the reliability of the sensor is influenced not only by the sensing material (MOX), but also by the transducer of the sensor [12][13][14]. In particular, when configuring a sensitive amplifier circuit with n-and p-channel FETtype (nFET and pFET) gas sensors, the nFET-type gas sensor is exposed to iterative off-state stress (OSS) during the circuit operation [15][16][17]. When the input signal of the sensing amplifier circuit is low, the OSS is applied to the nFET (V G = GND, V D = V DD , V S = GND, V B = GND), as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Recovery of off-state stress-induced damage in FET-type gas sensor using self-curing method

et al. 2023

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The need for high-performance gas sensors is driven by concerns over indoor and outdoor air quality, and industrial gas leaks. Due to their structural diversity, vast surface area, and geometric tunability, metal oxides show significant potential for the development of gas sensing systems. Despite the fact that several previous reports have successfully acquired a suitable response to various types of target gases, it remains difficult to maintain the reliability of metal oxide-based gas sensors. In particular, the degradation of the sensor platform under repetitive operation, such as off-state stress (OSS) causes significant reliability issues. We investigate the impact of OSS on the gas sensing performances, including response, low-frequency noise, and signal-to-noise ratio of horizontal floating-gate field-effect-transistor (FET)-type gas sensors. The 1/f noise is increased after the OSS is applied to the sensor because the gate oxide is damaged by hot holes. Therefore, the SNR of the sensor is degraded by the OSS. We applied a self-curing method based on a PN-junction forward current at the body–drain junction to repair the damaged gate oxide and improve the reliability of the sensor. It has been demonstrated that the SNR degradation caused by the OSS can be successfully recovered by the self-curing method.

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