1999
DOI: 10.1143/jjap.38.l805
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Decay Characteristics of Photoluminescence Lines in CuGaS 2 Crystals

Abstract: Time-resolved photoluminescence (PL) measurements have been carried out for CuGaS2 single crystals with a slightly Cu-rich composition grown by an iodine transport method. PL lines at 2.460 eV, 2.457 eV, 2.417 eV, 2.404 eV, 2.397 eV and 2.295 eV exhibited biexponential decay. The relationship between the decay time of the fast component (τ f ) and the localization energy (E loc) can be given by τ f ∝E … Show more

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Cited by 15 publications
(13 citation statements)
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“…The bands C 1 (2.4584 eV) and C 2 (2.4561 eV) presented in Fig. 3 may be analogues of bands H (2.457 eV), H * (2.460 eV) revealed by the authors of the work [16]. The band I a (2.501 eV) in the work [16] is attributed to bound excitons.…”
Section: Resultsmentioning
confidence: 53%
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“…The bands C 1 (2.4584 eV) and C 2 (2.4561 eV) presented in Fig. 3 may be analogues of bands H (2.457 eV), H * (2.460 eV) revealed by the authors of the work [16]. The band I a (2.501 eV) in the work [16] is attributed to bound excitons.…”
Section: Resultsmentioning
confidence: 53%
“…3 may be analogues of bands H (2.457 eV), H * (2.460 eV) revealed by the authors of the work [16]. The band I a (2.501 eV) in the work [16] is attributed to bound excitons. According to the above given data and the results reported in the works [18,19], the band at the energy 2.501 eV is determined by free excitons, namely by the transverse mode of the C 4 exciton polariton.…”
Section: Resultsmentioning
confidence: 53%
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