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A thin-film solar cell based on a Cu 2 ZnSnS 4 (CZTS) absorber layer deposited by pulsed laser deposition has been fabricated with an Al:ZnO (n-type) window layer and a CdS buffer layer. Some peaks attributed to ( 112), ( 200), ( 220), and (312) planes of CZTS appeared in an X-ray diffraction pattern of a thin film. The composition of the film was Sn-rich and the band gap energy was approximately 1.5 eV. A CZTS film annealed at 500 C in an atmosphere of N 2 had optical characteristics suitable for use in an absorber layer of a thin-film solar cell and was used for a solar cell. The CZTS thin-film solar cell with an active area of 0.092 cm 2 showed an open-circuit voltage of 546 mV, a short-circuit current of 6.78 mA/cm 2 , a fill factor of 0.48, and a conversion efficiency of 1.74%.

PACS 71.55.Ht, 78.55.Hx Photoluminescence from Cu 2 ZnSnS 4 bulk single crystals was studied as a function of temperature and excitation power density. The bulk single crystals showed a broad luminescence between 1.1 and 1.45 eV. The peak energy of the photoluminescence was shifted to higher energy side when the excitation power density was increased. The origon of the photoluminescence was attributed to donor -acceptor pair recombination with an activation energy of 48 meV.