Preparation of Cu2ZnSnS4 thin films by sulfurizing sol–gel deposited precursors

Tanaka, Kunihiko; Moritake, Noriko; Uchiki, Hisao

doi:10.1016/j.solmat.2007.04.012

Cited by 364 publications

(176 citation statements)

References 8 publications

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“…The absorption coefficient of CZTS is greater than 10 4 / cm and therefore only a thin layer (1-2 lm) can absorb most of the incident photons (Zhao and Qiao et al 2014;Mainz et al 2014;Fan 2014;Tanaka et al 2007;Chen et al 2009;Yu et al 2012). It is known that nanocone structure is an optimal shape for enhancing the light absorption (Wang and Leu 2012).…”

Section: Introductionmentioning

confidence: 99%

Green synthesis of wurtzite copper zinc tin sulfide nanocones for improved solar photovoltaic utilization

et al. 2014

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Cu 2 ZnSnS 4 (CZTS) is considered to be one of the most promising light absorbing materials for low-cost and high-efficiency thin-film solar cells. It is composed of earth abundant, non-toxic elements. In the present study, wurtzite CZTS nanocone has been synthesized by a green chemistry route. The nanocones have been characterized for its optical, structural and microstructural properties using UV-Vis spectrophotometer, X-ray diffraction, Raman spectroscopy and high-resolution transmission electron microscopy. Optical absorption result shows a band gap of 1.42 eV. XRD and Raman results show wurtzite structure and TEM studies reveal the nanocone structure of the grown material. Growing vertically aligned nanocone structure having smaller diameter shall help in enhancing the light absorption in broader range which shall enhance the efficiency of solar cell. This study is a step in this direction.

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Section: Introductionmentioning

confidence: 99%

Green synthesis of wurtzite copper zinc tin sulfide nanocones for improved solar photovoltaic utilization

et al. 2014

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“…The co-evaporation was performed by Tanaka et al [11] using metallic precursors and by Bjo¨rn-Arvid Schubert et al [12] us-ing copper, tin and zinc sulfide sources. Sputtering techniques were tested in different configurations: sequential deposition of metallic precursors [8,13] and co-sputtering of binary sulphide precursors [14]. Non-vacuum methods include electrodeposi-tion [15,16], chemical bath deposition [17] and spray pyrolysis [18,19].…”

Section: Introductionmentioning

confidence: 99%

Effects of sulphurization time on Cu2ZnSnS4 absorbers and thin films solar cells obtained from metallic precursors

Fernandes

Salomé

Sartori

et al. 2013

Solar Energy Materials and Solar Cells

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We report the results of a study of the sulphurization time effects on Cu2ZnSnS4 absorbers and thin film solar cells prepared from dc-sputtered stacked metallic precursors. Three different time intervals, 10 min, 30 min and 60 min, at maximum sulphurization temperature were considered. The effects of this parameter' change were studied both on the absorber layer properties and on the final solar cell performance. The composition, structure, morphology and thicknesses of the CZTS layers were analysed. The electrical characterization of the absorber layer was carried out by measuring the transversal electrical resistance of the samples as a function of temperature. This study shows an increase of the conductivity activation energy from 10 meV to 54 meV for increasing sulphurization time from 10 min to 60 min. The solar cells were built with the following structure: SLG/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Ni:Al grid. Several ac response equivalent circuit models were tested to fit impedance measurements. The best results were used to extract the device series and shunt resistances and capacitances. Absorber layer's electronic properties were also determined using the Mott-Schottky method. The results show a decrease of the average acceptor doping density and built-in voltage, from 2.0×10 17 cm −3 to 6.5×10 15 cm −3 and from 0.71 V to 0.51 V, respectively, with increasing sulphurization time. This results also show an increase of the depletion region width from approximately 90 nm to 250 nm.

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“…2 However, due to the low availability of In and Ga in the Earth's crust, the increasing world demand for ITO touch-sensitive displays, and the toxicity of Se, Cu 2 ZnSnS 4 (CZTS) in the kesterite phase has been proposed as a candidate to replace CIGS as the cell absorber layer. CZTS has an absorption coefficient over 10 4 cm −1 and a band gap of ∼ 1.5 eV, [3][4][5][6][7][8] which makes it suitable for applications in thin-film solar cells. The deposition of the precursors can be done under vacuum conditions as in the case of electron-beam evaporation 3,9,10 or radiofrequency (rf) magnetron sputtering.…”

Section: Introductionmentioning

confidence: 99%

“…The deposition of the precursors can be done under vacuum conditions as in the case of electron-beam evaporation 3,9,10 or radiofrequency (rf) magnetron sputtering. 4,11 Alternatively, the deposition of the precursors can be done under nonvacuum conditions as, for example, through spray pyrolysis, 12,13 the solgel method, 5 or sol-gel spin-coated deposition. 14 The CZTS is formed with a subsequent sulfurization of the precursors.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

et al. 2011

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In this work, we investigated structural, morphological, electrical, and optical properties from a set of Cu 2 ZnSnS 4 thin films grown by sulfurization of metallic precursors deposited on soda lime glass substrates coated with or without molybdenum. X-ray diffraction and Raman spectroscopy measurements revealed the formation of single-phase Cu 2 ZnSnS 4 thin films. A good crystallinity and grain compactness of the film was found by scanning electron microscopy. The grown films are poor in copper and rich in zinc, which is a composition close to that of the Cu 2 ZnSnS 4 solar cells with best reported efficiency. Electrical conductivity and Hall effect measurements showed a high doping level and a strong compensation. The temperature dependence of the free hole concentration showed that the films are nondegenerate. Photoluminescence spectroscopy showed an asymmetric broadband emission. The experimental behavior with increasing excitation power or temperature cannot be explained by donor-acceptor pair transitions. A model of radiative recombination of an electron with a hole bound to an acceptor level, broadened by potential fluctuations of the valence-band edge, was proposed. An ionization energy for the acceptor level in the range 29-40 meV was estimated, and a value of 172 ± 2 meV was obtained for the potential fluctuation in the valence-band edge.

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Preparation of Cu2ZnSnS4 thin films by sulfurizing sol–gel deposited precursors

Cited by 364 publications

References 8 publications

Green synthesis of wurtzite copper zinc tin sulfide nanocones for improved solar photovoltaic utilization

Green synthesis of wurtzite copper zinc tin sulfide nanocones for improved solar photovoltaic utilization

Effects of sulphurization time on Cu2ZnSnS4 absorbers and thin films solar cells obtained from metallic precursors

Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

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