Decomposition of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>1</mml:mn><mml:mo>/</mml:mo><mml:mi>f</mml:mi></mml:math>Noise in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Al</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mi>As</mml:mi><mml:mo>/</mml:mo><mml:mi>GaAs</mml:mi></mml:math>Hall Devices

Müller, Jens; Molnár, S. von; Ohno, Y.; Ohno, Hideo

doi:10.1103/physrevlett.96.186601

Cited by 35 publications

(28 citation statements)

References 30 publications

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“…3 the 100 nm probe is particularly quiet at V g = 0.26 V, but considerably less so at 0.24 and 0.28 V. It has been reported that, at T = 45 K and B = 0.5 T and for Hall crosses of sizes between 0.45 and 5 m, V g Ͼ Ϸ 100 mV suppresses S R 1/2 by roughly an order of magnitude from V g =0. 16, 17 We do not find such a clear pattern; rather, working at T Ͻ 10 K and B ഛ 20 G, we find that the precise points in V g where RTN is suppressed vary from probe to probe.…”

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confidence: 72%

Noise characteristics of 100nm scale GaAs∕AlxGa1−xAs scanning Hall probes

Hicks

Luan

Moler

et al. 2007

Applied Physics Letters

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The authors have fabricated and characterized GaAs/ Al x Ga 1−x As two-dimensional electron gas scanning Hall probes for imaging perpendicular magnetic fields at surfaces. The Hall crosses range from 85ϫ 85 to 1000ϫ 1000 nm 2 . They study low-frequency noise in these probes, especially random telegraph noise, and show that low-frequency noise can be significantly reduced by optimizing the voltage on a gate over the Hall cross. The authors demonstrate a 100 nm Hall probe with a sensitivity of 0.5 G / ͱ Hz ͑flux sensitivity of 0.25m⌽ 0 / ͱ Hz; spin sensitivity of 1.2 ϫ 10 4 B / ͱ Hz͒ at 3 Hz and 9 K.

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contrasting

confidence: 72%

Noise characteristics of 100nm scale GaAs∕AlxGa1−xAs scanning Hall probes

Hicks

Luan

Moler

et al. 2007

Applied Physics Letters

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“…The statistical study of lifetimes in the different states provides extremely rich information on the dynamics and the energy scales of the switching events as well as the related electronic properties, see for example refs. [114,115] and references therein for recent lifetime studies of defects in semiconductor heterostructures.…”

Section: Generation-recombination Noisementioning

confidence: 99%

Fluctuation Spectroscopy: A New Approach for Studying Low‐Dimensional Molecular Metals

Müller

2011

ChemPhysChem

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Fluctuations (or noise) are often merely considered a nuisance, an unwanted disturbance limiting the accuracy of a scientific measurement. Electronic fluctuations, however, reveal hidden pieces of information not present in the mean quantity (the resistance) itself. Herein we describe resistance noise spectroscopy as a powerful new tool for investigating the low-frequency dynamics of electronic processes in low-dimensional organic conductors. Over the years, these molecular charge-transfer complexes have provided unprecedented model systems for exploring the physics of low-dimensional materials. The combination of low dimensionality with other parameters, specific to molecular conductors, sets the stage for Coulomb correlation effects to become relevant and, under certain circumstances, even to dominate the properties of the π-electron system. The combined effects of strong electron-electron and electron-phonon interactions give rise to the rich phenomenology of ground states encountered in these materials. To provide examples, we describe noise spectroscopy as a method to study the coupling of the correlated charge carriers to intramolecular modes of lattice vibrations and to investigate the inhomogeneous coexistence region of antiferromagnetic (Mott) insulating and superconducting phases.

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“…51,52 In general, the frequency dependence is not exactly 1/f , but 1/f a ,where the exponent a ranges between 0 and 2. 26,27,51,52 In the following, we will use the name 1/f a noise in general, and 1/f noise is reserved for the case a = 1. Thus, the electric field correlation of 1/f a charge noise is…”

Section: Noise Correlationmentioning

confidence: 99%

“…δB Z = b 0 β −Ėcy sin θ cos ϕ + β +Ėcx sin θ sin ϕ , (26) where, b 0 = 2e/gµ B ω 2 d is defined for simplicity. One interesting feature here is that under some conditions the cross correlations, such as S + Y Z for θ = π/2, do not vanish.…”

Section: Spin Relaxation Ratesmentioning

confidence: 99%

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Electron spin relaxation due to charge noise

Huang

2014

Phys. Rev. B

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We study decoherence of an electron spin qubit in a quantum dot due to charge noise. We find that at the lowest order, the pure dephasing channel is suppressed for both 1/f charge noise and Johnson noise, so that charge noise leads to a pure relaxation channel of decoherence. Because of the weaker magnetic field dependence, the spin relaxation rate due to charge noise could dominate over phonon noise at low magnetic fields in a gate-defined GaAs or Si quantum dot or a InAs self-assembled quantum dot. Furthermore, in a large InAs self-assembled quantum dot, the spin relaxation rate due to phonon noise could be suppressed in high magnetic field, and the spin relaxation due to charge noise could dominate in both low and high magnetic field. Numerically, in a 1 Tesla field, the spin relaxation time due to typical charge noise is about 100 s in Si, 0.1 s in GaAs for a gate-defined quantum dot with a 1 meV confinement, and 10 µs in InAs self-assembled quantum dot with a 4 meV confinement.

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Decomposition of1/fNoise inAlxGa1−xAs/GaAsHall Devices

Cited by 35 publications

References 30 publications

Noise characteristics of 100nm scale GaAs∕AlxGa1−xAs scanning Hall probes

Noise characteristics of 100nm scale GaAs∕AlxGa1−xAs scanning Hall probes

Fluctuation Spectroscopy: A New Approach for Studying Low‐Dimensional Molecular Metals

Electron spin relaxation due to charge noise

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