The covalent functionalization of unoxidized silicon surfaces is of interest for a wide range of applications, and for fundamental studies linking surface functionalization and electronic properties. Determination of the level of substitution (yield) of a reaction on a silicon surface is necessary as the number of functional groups bound to the surface is directly linked to properties. X-ray photoelectron spectroscopy (XPS), is the most common analytical method for determining the substitution level of the chemical handle on the silicon surface, typically a Si-H or Si-Cl bond, through which a new stable bond is formed to link the molecule to the surface. Calculations using the atomic ratio of carbon to silicon as determined by XPS do not take into account the effect of adventitious carbon, retained solvent and the substitution level is typically measured by first assuming 100% substitution of a fictitious hydrocarbon layer with an effective thickness that is determined by XPS intensity ratio of C to Si, and then the real substitution level is taken as the ratio of the effective thickness to the theoretical height of the molecule. In this work, we take an alternative and more physically meaningful approach to deriving expressions for the substitution level, where the photoelectron attenuation length is proportional to the substitution level. For all-hydrocarbon molecules grafted to a silicon surface, this new approach yields the same equations for substitution levels as an earlier effective thickness model. More importantly, unlike the effective thickness models, this method can be extended to include molecules with a heteroatom "tag", such as fluorine and chalcogenides, for determining coverage by XPS; this latter approach is shown to provide a greater degree of certainty with respect to calculating coverage on silicon. We finish with a simple flowchart to guide the reader to the appropriate equation for both Si(111) and Si(100) surfaces.