2019
DOI: 10.1021/acsaem.8b01563
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Decoupling Effects of Surface Recombination and Barrier Height on p-Si(111) Photovoltage in Semiconductor|Liquid Junctions via Molecular Dipoles and Metal Oxides

Abstract: This work provides insight into carrier dynamics in a model photoelectrochemical system comprised of a semiconductor, metal oxide, and metal. To isolate carrier dynamics from catalysis, a common catalytic metal (Pt) is used in concert with an outer-sphere redox couple. Silicon (111) substrates were surface-functionalized with electronegative aryl moieties (p-nitrophenyl and m-dinitrophenyl). A mixed monolayer using p-nitrophenyl/methyl exhibited high surface quality as determined by X-ray photoelectron spectro… Show more

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Cited by 13 publications
(27 citation statements)
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“…We propose this interfacial field offsets the Si and metal work functions and increases the Si flatband potential. This phenomenon is similar to the effects of interfacial dipoles on semiconductor surfaces we and others have reported previously . Hu et.…”
Section: Discussionsupporting
confidence: 92%
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“…We propose this interfacial field offsets the Si and metal work functions and increases the Si flatband potential. This phenomenon is similar to the effects of interfacial dipoles on semiconductor surfaces we and others have reported previously . Hu et.…”
Section: Discussionsupporting
confidence: 92%
“…extensively detailed hole‐transport through “leaky” TiO 2 , in which they establish that Ti precursor choice and ALD growth conditions are the major determinants of defect density and thus the extent of current leakage . Recently, our group showed that use of ‘leaky’ TiO 2 overlayers on a photocathode in contact with the one‐electron outer‐sphere redox couple methyl viologen showed substantial decreases in photovoltage . Additionally, Ager and Javey et.…”
Section: Introductionmentioning
confidence: 91%
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