Decoupling of a current-biased intrinsic Josephson junction from its environment

Warburton, Paul A.; Kuzhakhmetov, AR; Burnell, Gavin; Blamire, M. G.; Schneidewind, H.

doi:10.1103/physrevb.67.184513

Cited by 18 publications

(14 citation statements)

References 22 publications

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“…As the dissipation of a JJ is represented by its quality factor, previous studies have focused only on the moderately damped regime of quality factor ϳ5, where the V-I curves with the SWCDs do not exhibit PDBs because the rate of the phase diffusion is too low to show a finite voltage at the temperatures studied. Thus, although the PDB itself has been extensively studied in conventional JJ and IJJ systems, 4,[11][12][13][14][15] the switching dynamics between a PDB and a quasiparticle-tunneling branch ͑QTB͒ has not been clearly resolved in terms of the quality factor.…”

Section: Introductionmentioning

confidence: 99%

Multiple-retrapping processes in the phase-diffusion regime of high-Tcintrinsic Josephson junctions

et al. 2009

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We report measurements of switching current distribution ͑SWCD͒ from a phase-diffusion branch ͑PDB͒ to a quasiparticle-tunneling branch ͑QTB͒ as a function of temperature in a cuprate-based intrinsic Josephson junction. Contrary to the thermal-activation model, the width of the SWCD increases and the corresponding switching rate shows a nonlinear behavior with a negative curvature in a semilogarithmic scale with decreasing temperature down to 1.5 K. Based on the multiple-retrapping model, we quantitatively demonstrate that the frequency-dependent junction quality factor, representing the energy dissipation in a phase-diffusion regime, determines the observed temperature dependence of the SWCD and the switching rate. We also show that a retrapping process from the QTB to the PDB is related to the low-frequency limit damping.

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Section: Introductionmentioning

confidence: 99%

Multiple-retrapping processes in the phase-diffusion regime of high-Tcintrinsic Josephson junctions

et al. 2009

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“…In this device the switching current at 4.2 K was 5.55 A. Under the assumption that switching was thermally-activated we inferred a critical current at T = 0 of 7.2 A [9]. This suggests a critical current density of 2.1 x 10 3…”

Section: Thermal Fluctuationsmentioning

confidence: 69%

Josephson current suppression in three-dimensional focused-ion-beam fabricated sub-micron intrinsic junctions

Warburton

Fenton

Korsah

et al. 2006

Supercond. Sci. Technol.

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We have fabricated intrinsic Josephson junction arrays in Tl 2 Ba 2 CaCu 2 O 8 thin films using three-dimensional focussed ion-beam milling. We have measured the dependence of the switching current density of these arrays at 4.2 K upon the junction cross-sectional area. There is strong suppression of the switching current density for junctions of area less than 1 m 2 , the current extrapolating to zero at an area of 0.25 m 2. We discuss the roles of gallium ion implantation and both thermal and quantum fluctuations in this current suppression.

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“…1(b). Since, in our sub-micron devices, dissipation occurs for I < I C , the critical current, [9] we work with an experimentally measured quantity I sw , which we define as the value of a quasi-static increasing current bias ramp at which the junction switches from the supercurrent branch to the first quasiparticle branch. The dependence on A of both I sw and the switching current density J sw = I sw /A at T =4.2 K is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Critical-current suppression in sub-micron intrinsic Josephson junction arrays

Fenton

Korsah

Grovenor

et al. 2006

J. Phys.: Conf. Ser.

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We present experimental results on intrinsic Josephson junctions fabricated by three-dimensional gallium focussed-ion-beam (FIB) milling in c-axis-oriented Tl2Ba2CaCu2O8 thin films. We report measurements of the dependence of the switching current density of these arrays at 4.2 K upon the junction cross-sectional area A showing strong suppression of the switching current density for junctions with A 1 μm 2 ; the switching current extrapolates to zero for A ∼ 0.25 μm 2. We discuss the roles of gallium ion implantation and both thermal and quantum fluctuations in this current suppression. We also present in-situ IV measurements demonstrating the use of a liquid-helium-cooled sample stage in conjunction with the FIB milling.

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Decoupling of a current-biased intrinsic Josephson junction from its environment

Abstract: At the plasma frequency this junction is isolated from its environment and it sees its own large (~ kW) impedance. Our results suggest that stacks of Josephson junctions may be used for isolation purposes in the development of a solid state quantum computer.

Cited by 18 publications

References 22 publications

Multiple-retrapping processes in the phase-diffusion regime of high-Tcintrinsic Josephson junctions

Multiple-retrapping processes in the phase-diffusion regime of high-Tcintrinsic Josephson junctions

Josephson current suppression in three-dimensional focused-ion-beam fabricated sub-micron intrinsic junctions

Critical-current suppression in sub-micron intrinsic Josephson junction arrays

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