2020
DOI: 10.1016/j.carbon.2020.08.024
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Decoupling phonon and carrier scattering at carbon nanotube/Bi2Te3 interfaces for improved thermoelectric performance

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Cited by 40 publications
(32 citation statements)
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“…It has been stated that the energy barrier should be adjusted to 0.2 eV in order to obtain optimal energy filtering effect. [ 175 ] Some research found that increasing the CNT concentration increased electrical conductivity, [ 172,174,176,177 ] whereas others found the reverse. [ 178–181 ] The changing CNT content might explain this discrepancy.…”
Section: Discontinuous Interface Modificationmentioning
confidence: 99%
“…It has been stated that the energy barrier should be adjusted to 0.2 eV in order to obtain optimal energy filtering effect. [ 175 ] Some research found that increasing the CNT concentration increased electrical conductivity, [ 172,174,176,177 ] whereas others found the reverse. [ 178–181 ] The changing CNT content might explain this discrepancy.…”
Section: Discontinuous Interface Modificationmentioning
confidence: 99%
“…The extreme oxygen sensitivity of CNTs leads to the p‐type characteristic in air 20,21 ; fortunately, their n‐type characteristics can be realized by treatment with amino‐substituted rylene dimides, 22 diethylenetriamine doping, and subsequent CaH 2 treatment, 23 or cationic surfactants, 24 and so forth. To date, a few publications of n‐type Bi 2 Te 3 /CNT hybrids have been reported using the magnetron sputtering technique or the hot‐press method 25–27 . For example, in 2019, Jin et al 25 reported flexible films prepared by anchoring layer‐structured highly ordered Bi 2 Te 3 nanocrystals on a CNT scaffold, which showed both n‐type high TE performance (ZT up to 0.89 at room temperature) and good flexibility.…”
Section: Introductionmentioning
confidence: 99%
“…For example, in 2019, Jin et al 25 reported flexible films prepared by anchoring layer‐structured highly ordered Bi 2 Te 3 nanocrystals on a CNT scaffold, which showed both n‐type high TE performance (ZT up to 0.89 at room temperature) and good flexibility. Later, they sequentially found that by decoupling phonon and carrier scattering at SWCNTs/Bi 2 Te 3 interfaces, the TE performance could be improved, and they further fabricated a flexible TE device based on the Bi 2 Te 3 /CNT hybrid 26 . In addition, Liu et al 27 reported flexible TE materials and devices based on a Bi 2 Te 3 /CNT hybrid fabricated using a magnetron sputtering technique.…”
Section: Introductionmentioning
confidence: 99%
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“…Meanwhile, the interface could also scatter phonons to reduce the lattice thermal conductivity, and finally the ZT value of the material will be further improved [ 1 ]. Experimentally, metal/semi-metal or carbon had been introduced in Bi 2 Te 3 to build heterostructures (such as Bi 2 Te 3 /Ag [ 12 , 17 ], Bi 2 Te 3 /Cu [ 12 , 18 ] Bi 2 Te 3 /Cd [ 19 ], Bi 2 Te 3 /Te [ 20 ], Bi 2 Te 3 /carbon nanotube [ 10 , 21 ]) especially by solution or sintering method to further enhanced the TE properties. Oxide layer was also introduced into the Ag/Sb 2 Te 3 system by atomic layer deposition, and the filtering effect of the corresponding interface on low-energy carriers was discussed [ 6 ].…”
Section: Introductionmentioning
confidence: 99%