Decrease in Surface Roughness of c-Plane-oriented MnSb Films Prepared by Sputtering.

伸, 斉藤; 好人, 芦沢; 弘樹, 荘司; 研, 高橋

doi:10.3379/jmsjmag.25.855

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…A B20-type MnSi epitaxial layer was used as a template for the epitaxial growth of the following MnTe under-layer and Mn50(Te50-xSbx) films. The MnSi template layer was formed by a natural reaction between the Si substrate and a 1-nm-thick Mn layer with an elevated substrate temperature of 623 K 3,7) . As an under-layer, a c-plane oriented 50-nm-thick MnTe layer was formed on the MnSi template layer at 623 K by hetero-epitaxy.…”

Section: Methodsmentioning

confidence: 99%

“…NiAs-type MnSb with lattice parameters, a = 4.128 Å and c = 5.789 Å 1) , is a ferromagnetic substance whose magnetic easy axes <11.0> lie in the c-plane [1][2][3] as shown in Fig. 1 (a), while NiAs-type MnTe is an antiferromagnetic substance whose spins align ferromagnetically and parallel to the c-plane in each atomic plane of Mn and are antiferromagnetically coupled with the adjacent atomic plane 4) as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

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Structure and Magnetism of c-plane Oriented Mn50(Te50-xSbx) Epitaxial Thin Films with NiAs-type Structure

et al. 2019

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Structure and Magnetism of c-plane Oriented Mn50(Te50-xSbx) Epitaxial Thin Films with NiAs-type Structure

et al. 2019

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Temperature dependence of perpendicular magnetic anisotropy for c-plane-oriented MnSb sputtered films

Ashizawa

Saito

Takahashi

2002

Journal of Applied Physics

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The temperature dependence of magnetic anisotropy was investigated for c-plane-oriented MnSb sputtered films. The main results were as follows: (1) A MnSb phase with low Mn contents between 50.1 at. % and 50.8 at. % was formed in c-plane-oriented MnSb films. (2) It was clarified that the perpendicular magnetic anisotropy, which originated from uniaxial magnetocrystalline anisotropy of NiAs-type hexagonal structure, changed from a negative value of −3.99×106 erg/cm3 at room temperature to a positive value of 3.73×105 erg/cm3 at 300 °C. The perpendicular magnetic anisotropy crossed 0 erg/cm3 at about 270 °C. (3) The formation of the MnSb phase with Mn content of about 51.5 at. % was necessary to reduce the transition temperature, where the MnSb film changed its easy axis from the film plane to the film normal direction, to 150–200 °C.

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Decrease in Surface Roughness of c-Plane-oriented MnSb Films Prepared by Sputtering.

Cited by 2 publications

References 6 publications

Structure and Magnetism of <i>c</i>-plane Oriented Mn<sub>50</sub>(Te<sub>50-<i>x</i></sub>Sb<sub><i>x</i></sub>) Epitaxial Thin Films with NiAs-type Structure

Structure and Magnetism of <i>c</i>-plane Oriented Mn<sub>50</sub>(Te<sub>50-<i>x</i></sub>Sb<sub><i>x</i></sub>) Epitaxial Thin Films with NiAs-type Structure

Temperature dependence of perpendicular magnetic anisotropy for c-plane-oriented MnSb sputtered films

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