1999
DOI: 10.1016/s0038-1101(99)00154-9
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Deep centers in AlGaN-based light emitting diode structures

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Cited by 40 publications
(34 citation statements)
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“…The apparent activation energy for the saturation current in this region was 0.18 eV. This is in good agreement with our earlier measurements on other types of p-i-n structures 16 and suggests that tunneling still remains dominant but the process at play requires some moderate activation of the carriers. For temperatures between 320 K and 400 K the ideality factor continued to slightly decrease (from 1.6 to 1.5) and the apparent activation energy increased to 0.5 eV.…”
Section: Current-voltage I-v Measurementssupporting
confidence: 91%
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“…The apparent activation energy for the saturation current in this region was 0.18 eV. This is in good agreement with our earlier measurements on other types of p-i-n structures 16 and suggests that tunneling still remains dominant but the process at play requires some moderate activation of the carriers. For temperatures between 320 K and 400 K the ideality factor continued to slightly decrease (from 1.6 to 1.5) and the apparent activation energy increased to 0.5 eV.…”
Section: Current-voltage I-v Measurementssupporting
confidence: 91%
“…24 It was also noticed that using p-AlGaN films instead of p-GaN greatly reduces the influence of parasitic Mg diffusion into the undoped i-layer. 16 The densities of deep traps detected in i-layers of type I and type II diodes are not too high per se, but the centers giving rise to persistent changes in conductivity are very undesirable (to say nothing of the defects that can move under applied electric fields at very moderate temperatures not exceeding 120°C as we have demonstrated for our p-i-n structures. 11,12 For type I diodes the electron concentration in the i-layer is too high and the thickness of the layer is too low to allow operation at voltages greatly exceeding 100 V which is confirmed by more detailed studies of the breakdown behavior in such devices.…”
Section: Discussionmentioning
confidence: 75%
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