Deep centers in undoped semi-insulating InP

Creation and suppression of point defects through a kick-out substitution process of Fe in InP

“…This is in great contrast to the five defects detected in the undoped SI InP material located at 0.22, 0.25, 0.37, 0.51, and 0.63 eV. Our results of defects in undoped SI InP are similar to those of Marrakchi et al 13 and Fang et al 14 It has also been found that the quantity and signature of defects in undoped SI InP are the same as those in SI InP prepared by annealing n-type InP predoped with a low concentration of Fe. 13,15 Based on this analysis, it can be concluded that Fe diffusion has suppressed the formation of three defects in the SI InP material.…”

Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates

“…1,2 To control the material quality, it is important to understand the nature of the deep traps in the SI material. To this end, we have successfully applied thermally stimulated current (TSC) spectroscopy, which is known to be a very sensitive technique for investigating point-defect and impurity-related traps in various SI semiconductors, such as HPSI GaAs and InP, [3][4][5] and carbon-doped SI-GaN. 6 In this paper, we present (1) the fundamentals of TSC spectroscopy; (2) typical TSC spectra measured on two types of HPSI 4H-SiC material, grown by physical vapor transport (PVT) 1 and high-temperature chemical vapor deposition (HTCVD); 2 and (3) theoretical fitting of a dominant hole trap (peaking at ϳ150 K) related to boron.…”

Approach for defect suppression and preparation of high quality semi-insulating InP

“…It has been found that the formation of the defects in the SI-InP samples depends on the annealing conditions, such as ambient, phosphorus pressure, etc. [14][15][16]. The defects formed in the annealing process involve in the electrical compensation of the SI-InP materials.…”