Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

Dalibor, T.; Pensl, Gerhard; Matsunami, Hiroyuki; Kimoto, Tsunenobu; Choyke, W. J.; Schöner, Adolf; Nordell, N.

doi:10.1002/1521-396x(199707)162:1<199::aid-pssa199>3.0.co;2-0

Cited by 430 publications

(291 citation statements)

References 33 publications

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“…It was observed that defect E 0.39 disappeared after leaving the sample at room temperature for a week, showing that the defect was not stable at room temperature. The deep level defects E 0.62 and E 0.65 have been previously reported to be defects composed of several energy levels commonly referred to as the Z 1 /Z 2 [16,[26][27][28][29].…”

Section: Deep Level Transient Spectroscopy Analysismentioning

confidence: 99%

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Omotoso

Meyer

Auret

et al. 2016

Physica B: Condensed Matter

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Irradiation experiments have been carried out on 1.9 × 10 16 cm -3 nitrogen-doped 4H-SiC at room temperature using 5.4 MeV alpha-particle irradiation over a fluence ranges from 2.6 × 10 10 to 9.2 × 10 11 cm -2 . Current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements have been carried out to study the change in characteristics of the devices and free carrier removal rate due to alpha-particle irradiation,

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Section: Deep Level Transient Spectroscopy Analysismentioning

confidence: 99%

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Omotoso

Meyer

Auret

et al. 2016

Physica B: Condensed Matter

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“…In both spectra, the well-known intrinsic defects Z 1/2 (Ref. 20) and EH6/7 (Ref. 21) were observed.…”

Section: A Fe In N-type 4h-sicmentioning

confidence: 99%

Deep levels in iron doped n- and p-type 4H-SiC

Beyer¹,

Hemmingsson²,

Leone³

et al. 2011

Journal of Applied Physics

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Deep levels were detected in Fe-doped n-and p-type 4H-SiC using deep level transient spectroscopy (DLTS). One defect level (E C -0.39 eV) was detected in n-type material. DLTS spectra of p-type 4H-SiC show two dominant peaks (E V þ 0.97 eV and E V þ 1.46 eV). Secondary ion mass spectrometry measurements confirm the presence of Fe in both n-and p-type 4H-SiC epitaxial layers. The majority of the capture process for Fe1, Fe2, and Fe3 is multi-phonon emission assisted. These three detected peaks are suggested to be related to Fe.

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“…HEE irradiation induces defects in SiC. [17][18][19] Some defects may lead generation recombination current leading to higher ideality factors. Fig.…”

Section: I-v Resultsmentioning

confidence: 99%

Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes

Paradzah

Omotoso

Legodi

et al. 2016

Journal of Elec Materi

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Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

Cited by 430 publications

References 33 publications

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Deep levels in iron doped n- and p-type 4H-SiC

Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes

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