Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes

Paradzah, Alexander Tapera; Omotoso, Ezekiel; Legodi, M.J.; Auret, F.D.; Meyer, W.E.; Diale, M.

doi:10.1007/s11664-016-4609-z

Cited by 19 publications

(21 citation statements)

References 32 publications

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“…The increment is approximately 1.3 times from the before irradiation; compared to Infineon, the increment at the highest dose to the before irradiation is only about 1 time. The 1.35 ideality factor of 15MGy STMicroelectronics devices indicates that the current transportation inside the diodes is no longer depend solely on the thermionic emission mechanism [8,9]. On top of that, the saturation current also shows an incrementing behavior and this is rather expected and has been reported by several other researchers due to the irradiation-induced defects at the metal-semiconductor interface which caused tunneling of the free carrier through the barrier [8], [10], [11].…”

Section: Forward Bias Current Density-voltage Characteristicsmentioning

confidence: 53%

Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation

Khairi¹,

Rahim²,

Saidin³

et al. 2019

Bulletin EEI

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This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reduction is mainly due to the significant increase of the series resistance (i.e. Infineon: 1.45Ω at before irradiation → 121×103 Ω at 15MGy); STMicroelectronics: 1.44Ω at before irradiation → 2.1×109 Ω at 15MGy). This increase in series resistance gives 4.6 and 8.2 orders of magnitude reduction for the forward-bias current density of Infineon and STMicroelectronics respectively. It is also observed that the ideality factor and the saturation current of the diodes increases with increasing dose (i.e. ideality factor- Infineon: 1.01 at before irradiation → 1.05 at 15MGy; STMicroelectronics: 1.02 at before irradiation → 1.3 at 15MGy | saturation current- Infineon: 1.6×10-17A at before irradiation → 2.5×10-17A at 15MGy; STMicroelectronics: 2.4×10-15A at before irradiation → 8×10-15A at 15MGy). Reverse-bias leakage current density in model by Infineon increases by one order of magnitude after 15MGy irradiation, however, in model by STMicroelectronics decreases by one order of magnitude. Overall, for these particular samples studied, Infineon devices have shown to be better in quality and more radiation resistance toward electron irradiation in forward-bias operation while STMicroelectronics exhibit better characteristics in reverse-bias operation.

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Section: Forward Bias Current Density-voltage Characteristicsmentioning

confidence: 53%

Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation

Khairi¹,

Rahim²,

Saidin³

et al. 2019

Bulletin EEI

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“…After the bombardment of 15 MGy of electrons, the ideality factor, increased only from 1.04 to 1.1, remaining close to unity, which confirm that thermionic emission remains as the major transport mechanism during irradiation process [11]. Note also that R s increased from 1.3 to 15 M , I s decreased from 4.2 · 10 −15 to 1.4 · 10 −15 A, while b increased from 1.20 to 1.23 eV.…”

Section: H-sic Schottky Diodementioning

confidence: 64%

“…These traps behave as generation-recombination (G−R) centers which are responsible for emission and capture processes affecting the RB leakage current [10]. Paradzah et al [11] reported that, the directly proportional relationship between reverse leakage current and reverse voltage is due to the lowering of Schottky barrier. When we increase the reverse voltage, the electric field E will also increase and cause the Schottky barrier to become lower, hence increasing the reverse leakage current.…”

Section: H-sic Schottky Diodementioning

confidence: 99%

The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

Ganiyev

Khairi

Fauzi

et al. 2017

Физика И Техника Полупроводников

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In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is , and barrier height, b , were not noticeable after the irradiation. However, the series resistance, Rs , has increased significantly with increasing radiation dose. In addition, temperature dependence current−voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant.

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“…Parameters for the I-V characteristics in Figure 1 (ideality factor (n), I-V barrier height (ϕ I-V ), and the reverse leakage current at -2 V) were determined using the thermionic emission (TE) model [16]. also been observed in 4H-SiC exposed to high energy electrons [20]. This defect (Z 1 center)…”

Section: Resultsmentioning

confidence: 97%

Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC

Tunhuma

Auret

Legodi

et al. 2018

Materials Science in Semiconductor Processing

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We have studied the defects introduced in n-type 4H-SiC during sputter deposition of tungsten using deep-level transient spectroscopy (DLTS). Current-voltage and capacitancevoltage measurements showed a deterioration of diode thermionic emission characteristics due to the sputter deposition. Two electrically active defects E 0.29 and E 0.69 were introduced. Depth profiling revealed that sputter deposition increases the concentration of the native Z 1 defect. A comparison with prominent irradiation and process induced defects showed that the E 0.29 was unique and introduced during sputter deposition only. The E 0.69 may be silicon vacancy related defect.

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Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes

Cited by 19 publications

References 32 publications

Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation

Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation

The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC

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