No abstract

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, I , and barrier height, Φ , were not noticeable after the irradiation. However, the series resistance, R , has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant.The article is published in the original.

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is , and barrier height, b , were not noticeable after the irradiation. However, the series resistance, Rs , has increased significantly with increasing radiation dose. In addition, temperature dependence current−voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant.

In this work, investigates of the electron irradiation effects on the electrical characteristics of 4H-SiC Schottky diodes has been done. Commercial 4H-SiC Schottky diodes were electron irradiated with the dose of 6 MGy, 9 MGy, 12 MGy and 15 MGy using EPS-3000 electron beam machine. Electrical characterization of post irradiation diodes showed that the forward bias (FB) current decreased while reverse bias (RB) leakage current increased. The series resistance was also increased as well as the electron fluence increased. The increases of resistance indicated that the RB leakage current was increased. It was believed that both electron-induce displacement and the formation of generation-recombination (G-R) centres as the cause of the carrier density decreased.