We investigated multiwavelength fiber laser (MWFL) performance using different types of semiconductor optical amplifiers (SOAs) utilizing Lyot filter as comb filter. The lasing performances of linear SOA (LSOA), nonlinear SOA (NLSOA) and booster optical amplifier (BOA) at different current settings were observed. Among the three SOAs, LSOA has the best lasing performance due to the lowest peak power difference with the highest number of lasing lines, a high ER value of 42 dB and considerable high peak power of -14.1 dBm at 550 mA. The multiwavelength laser is stable within 60 minutes at power fluctuation of less than 0.2 dB. The output spectra at 550 mA for all the SOAs are 70 nm to 80 nm wavelength difference from the ASE spectra.

Nitride-based light emitting diodes (LEDs) is an attractive material due to its high temperature tolerance and suitable to be used in extreme environment. The irradiation process of Gallium Nitride (GaN) diode was carried out by electron irradiation with 1000 kGy and 1500 kGy doses with a conveyor speed of 50 kGy per pass. Capacitance-voltage (C-V) and current-voltage (I-V) characterization for both pre and post irradiation samples was done. Both current and capacitance show decreasing while reverse leakage current increased after irradiation. The reverse leakage current revealed that the current were start leakage at 1.0 x10 -7 A and 1.0 x10-9 A for 1000 kGy and 1500 kGy irradiations respectively. The current-voltage graph indicated that the effect of electron irradiation on diode produced weak spots as defect cause leakage current. The traps and bulk defect is believed to contributed to the leakage current increased.

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The e ects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode Ganiyev, Sabuhi ; Khairi, M. Azim ; (...); Hasbullah, N. F.