Deep defect levels and mechanical strain in Ge+-implanted silicon

Suprun-Belevich, Yu.; Palmetshofer, L.

doi:10.1016/0168-583x(94)00492-7

Cited by 13 publications

(11 citation statements)

References 14 publications

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“…Germanium, when dissolved in a substitutional position, does not generate any useful localized state, being isovalent to silicon. A careful choice of the annealing temperature after implantation around 750 K 24 , however, allows one to activate the defect forming deep energy states in the silicon band gap, associated to germanium-vacancy complexes (Ge V n ).…”

Section: Introductionmentioning

confidence: 99%

“…The localized levels of these Ge V n defects 24,25 have been characterized in the 1970’s by deep level transient spectroscopy (DLTS) showing two energy states around −0.53 eV and −0.28 eV below the conduction-band minimum. These energy levels are similar to those reported for the simple silicon vacancy, that would be suitable to behave as deep donor state in terms of energy.…”

Section: Introductionmentioning

confidence: 99%

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GeVn complexes for silicon-based room-temperature single-atom nanoelectronics

Achilli

Manini

Onida

et al. 2018

Sci Rep

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We propose germanium-vacancy complexes (GeVn) as a viable ingredient to exploit single-atom quantum effects in silicon devices at room temperature. Our predictions, motivated by the high controllability of the location of the defect via accurate single-atom implantation techniques, are based on ab-initio Density Functional Theory calculations within a parameterfree screened-dependent hybrid functional scheme, suitable to provide reliable bandstructure energies and defect-state wavefunctions. The resulting defect-related excited states, at variance with those arising from conventional dopants such as phosphorous, turn out to be deep enough to ensure device operation up to room temperature and exhibit a far more localized wavefunction.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

GeVn complexes for silicon-based room-temperature single-atom nanoelectronics

Achilli

Manini

Onida

et al. 2018

Sci Rep

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“…By the annealing at 450 °C, the transport of the transistor conductance is almost restored, even though with a lower mobility than the pre‐implantation one. As known from the literature [ 23,47 ] such temperature is insufficient for the activation of the Ge V defect, thus here Ge acts by just affecting the mobility. Finally, by applying an annealing temperature of 550 °C the Ge V defects are activated, as demonstrated by the formation of an impurity band.…”

Section: Methodsmentioning

confidence: 99%

“…[22] Based on ab initio calculations, [3] some of us have recently demonstrated that GeV complexes in silicon are stable defects, characterized by excited states deep in the bandgap, at about ≃−0.5 eV and ≃−0.35 eV from the conduction band, consistent with experiment. [23] Such impurity states have large on-site electron-electron repulsion (≃150 meV) due to their highly localized wavefunctions (the decay length of the lowest charged state is ≃0.45 nm). This localization far exceeds that of conventional P and B states.…”

mentioning

confidence: 99%

Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms

Achilli

Fratesi

et al. 2021

Adv Funct Materials

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Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investigating solid state devices with intentional vacancy-related defects at controlled position, the functionalization of silicon vacancies is reported on here by implanting Ge atoms through single-ion implantation, producing Ge-vacancy (GeV) complexes. The quantum transport through an array of GeV complexes in a silicon-based transistor is investigated. By exploiting a model based on an extended Hubbard Hamiltonian derived from ab initio results, anomalous activation energy values of the thermally activated conductance of both quasi-localized and delocalized many-body states are obtained, compared to conventional dopants. Such states are identified, forming the upper Hubbard band, as responsible for the experimental sub-threshold transport across the transistor. The combination of the model with the single-ion implantation method enables future research for the engineering of GeV complexes toward the creation of spatially controllable individual defects in silicon for applications in quantum information technology.

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“…The defect level at 130 K 19 is located at 0.30 eV below the conduction band and has an extrapolated capture cross section of n ϭ4ϫ10 Ϫ15 cm 2 while the levels at 175 and 240 K are made up of at least two contributions each. 20 Studies on these kinds of defects following thermal treatments above 400°C have been scarce 21,22 until recently. 23,24 These defects have been observed following silicon implantation into n-type epitaxial silicon with doses above 1ϫ10 10 cm Ϫ2 and a subsequent anneal above 550°C.…”

mentioning

confidence: 99%

The influence of diffusion temperature and ion dose on proximity gettering of platinum in silicon implanted with alpha particles at low doses

Schmidt

Svensson

Godey

et al. 1999

Applied Physics Letters

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Platinum has been diffused into epitaxial n-type silicon at 600, 650, and 700 °C for 30 min following implantation with 3.3 MeV alpha particles. The doses employed were between 1×1011 and 1×1014 He+ cm−2. Thereafter the samples were characterized using deep level transient spectroscopy (DLTS). The samples diffused at 700 °C show only the deep level at 0.23 eV below the conduction band that is attributed to substitutional platinum. DLTS profiling reveals a decoration of the region of maximal damage by the platinum for lower doses while for higher ones the platinum concentration is observed to decrease or vanish in this region. In addition, other deep levels may appear (so-called K lines). As the implantation dose increases, so does the platinum concentration following diffusion at 700 °C at the shallow end of the DLTS working region. It is shown that, by controlling the amount of implantation induced defects and the diffusion temperature, one can steer the amount of platinum that arrives in the region of maximal damage.

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Deep defect levels and mechanical strain in Ge+-implanted silicon

Cited by 13 publications

References 14 publications

GeVn complexes for silicon-based room-temperature single-atom nanoelectronics

GeVn complexes for silicon-based room-temperature single-atom nanoelectronics

Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms

The influence of diffusion temperature and ion dose on proximity gettering of platinum in silicon implanted with alpha particles at low doses

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