The influence of diffusion temperature and ion dose on proximity gettering of platinum in silicon implanted with alpha particles at low doses

Abstract

Platinum has been diffused into epitaxial n-type silicon at 600, 650, and 700 °C for 30 min following implantation with 3.3 MeV alpha particles. The doses employed were between 1×1011 and 1×1014 He+ cm−2. Thereafter the samples were characterized using deep level transient spectroscopy (DLTS). The samples diffused at 700 °C show only the deep level at 0.23 eV below the conduction band that is attributed to substitutional platinum. DLTS profiling reveals a decoration of the region of maximal damage by the platinum for lower doses while for higher ones the platinum concentration is observed to decrease or vanish in this region. In addition, other deep levels may appear (so-called K lines). As the implantation dose increases, so does the platinum concentration following diffusion at 700 °C at the shallow end of the DLTS working region. It is shown that, by controlling the amount of implantation induced defects and the diffusion temperature, one can steer the amount of platinum that arrives in the region of maximal damage.

High-power P-i-N diode with the local lifetime control based on the proximity gettering of platinum

“…Up to this 0741-3106/02$17.00 © 2002 IEEE time, it was only known that this is possible at a distance up to 13 m approx. on Czochralski (CZ) grown silicon [4], [5]. Our results show that for both the CZ and FZ silicon the maximal Pt concentration is for the He dose of about 1 10 cm .…”

“…The radiation defects of the reference devices were stabilized at 200 C for 60 min. The novel devices were annealed at 700 C for 20 min to promote the platinum diffusion from the PtSi contact to the position of the maximal damage [4], [5].…”

Fast recovery diode with local lifetime control using high-energy platinum and helium implantation

“…Recently, principle to shape the platinum depth profile was developed using the low-temperature diffusion controlled by radiation defects in Czoehralski silicon [3,4]. Later on, this method was extended into the depths of hundred pm and Float Zone (FZ) silicon using platinum silicide [5] and platinum implantation [6] as a source for platinum diffusion.…”

Stability of proximity gettering of platinum in silicon implanted with alpha particles at low doses

“…17 As the ion dose increased, the concentration of substitutional platinum decreased in the peak region. 17 As the ion dose increased, the concentration of substitutional platinum decreased in the peak region.…”