Deep depletion concept for diamond MOSFET

Abstract

A stable deep depletion regime is demonstrated in metal oxide semiconductor capacitors using p-type oxygen-terminated (100) diamond as a semiconductor and Al2O3 deposited by Atomic Layer Deposition at 380 °C. Current voltage I(V) and capacitance voltage C(V) measurements were performed to evaluate the effectiveness of diamond semiconductor gate control. An effective modulation of the space charge region width is obtained by the gate bias, where the deep depletion regime is demonstrated for a positive gate bias. The deep depletion concept is described and proposed for MOSFET devices. Finally, a proof of concept of diamond deep depletion MOSFETs is presented.

175V, > 5.4 MV/cm, $50\ \mathrm{m}\Omega.\text{cm}^{2}$ at 250°C Diamond MOSFET and its reverse conduction

“…The working principle of this device is extensively discussed in [8]. It relies on the capability of wide band gap semiconductors to have a very stable depletion regime even for high gate biases, past the inversion threshold (so called deep depletion), and high temperatures.…”

Inversion-type p-channel diamond MOSFET issues

“…Recently, Kawarada's group reported the first vertical H-diamond MOS-FETs [24,25]. In addition, Pernot's group proposed the deep depletion concept and concentrated on the oxygen-terminated diamond (O-diamond) MOSFETs [26][27][28]. However, both Hand O-diamond MOSFETs basically demonstrate normally on characteristics.…”

Diamond semiconductor performances in power electronics applications

“…Even if n-type layers are challenging for diamond, bipolar diodes can be seen in the literature [24] where a 1 kV breakdown voltage has been reached and diamond Schottky PN diodes with better compromises in on-state losses and off-state leakage currents [25]. Concerning transistors, the diamond MESFET (BV = 1.5 kV) [26] and the deep depletion MOSFET (BV = 200V, breakdown field = 4 MV/cm) [27] use the deep depletion regime which is stable thanks to the diamond properties [28]. Diamond transistors using a two dimensional hole gas (2DHG) have also been demonstrated with a 1700 V breakdown voltage [5].…”