Deep Electronic Levels in n-Type and p-Type 3C-SiC

Schöler, Michael; Lederer, Maximilian; Wellmann, Peter J.

doi:10.4028/www.scientific.net/msf.963.297

Cited by 2 publications

(1 citation statement)

References 24 publications

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“…As shown in previous works [20,21], as-grown bulk 3C-SiC exhibits typical temperature dependent PL-spectra, as can be seen in Figure 1b. At low temperatures, a bright luminescence in the visible range (VIS) can be observed.…”

Section: Resultssupporting

confidence: 81%

Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide

2019

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In recent years, cubic silicon carbide (3C-SiC) has gained increasing interest as semiconductor material for energy saving and optoelectronic applications, such as intermediate-band solar cells, photoelectrochemical water splitting, and quantum key distribution, just to name a few. All these applications critically depend on further understanding of defect behavior at the atomic level and the possibility to actively control distinct defects. In this work, dopants as well as intrinsic defects were introduced into the 3C-SiC material in situ during sublimation growth. A series of isochronal temperature treatments were performed in order to investigate the temperature-dependent annealing behavior of point defects. The material was analyzed by temperature-dependent photoluminescence (PL) measurements. In our study, we found a variation in the overall PL intensity which can be considered as an indication of annealing-induced changes in structure, composition or concentration of point defects. Moreover, a number of dopant-related as well as intrinsic defects were identified. Among these defects, there were strong indications for the presence of the negatively charged nitrogen vacancy complex (NC–VSi)−, which is considered a promising candidate for spin qubits.

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Section: Resultssupporting

confidence: 81%

Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide

2019

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Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters

Schöler

Lederer

Schuh

et al. 2019

Physica Status Solidi (b)

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Cubic silicon carbide (3C‐SiC) is an emerging material with promising properties for various applications in power electronics, energy saving, and quantum technology. In recent years, size and quality of 3C‐SiC substrates reached a level where real applications become tangible. However, there is still a lack of knowledge concerning defects in 3C‐SiC. Point defects can be considered as one of the key defects, as they influence all applications in one way or another. Herein, the growth rate dependent tailoring of point defects—according to probability and density—is presented for bulk 3C‐SiC grown by epitaxial sublimation growth. Photoluminescence characterization reveals a group of four distinct peaks in the near‐infrared which are assumed to have their joint origin in the carbon vacancy. Moreover, indications for a novel Al‐related defect are presented. The observed defects show bright luminescence in the 175 K/200 K regime and remain excitable up to 300 K.

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Deep Electronic Levels in n-Type and p-Type 3C-SiC

Cited by 2 publications

References 24 publications

Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide

Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide

Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters

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