Deep electronic states associated with a metastable hole trap in n-type GaN

Emiroglu, D.; Evans–Freeman, J.H.; Kappers, M. J.; McAleese, C.; Humphreys, C. J.

doi:10.1016/j.physb.2007.08.175

Cited by 6 publications

(2 citation statements)

References 10 publications

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“…But these dislocation densities of n-GaN on Si are one order of magnitude higher than that of the density observed on sapphire. Our result corresponds to previous literature reports for deep levels, except for E5 [5][6][7][8][9][10][11][12]. In these spectra, we can observe a dominant peak which has more than two shoulders in n-GaN on Si sample, and two peaks in n-GaN on sapphire sample, respectively.…”

Section: Hall C-v Xrd Measurementsupporting

confidence: 91%

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Electron Traps in n-GaN Grown on Si (111) Substrates by MOVPE

2008

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Deep level electron traps in n-GaN grown by metal organic vapor phase epitaxy (MOVPE) on Si (111) substrate were studied by means of deep level transient spectroscopy (DLTS). The growth of n-GaN on different pair number of AlN/GaN superlattice buffer layers (SLS) system and on c-face sapphire substrate are compared. Three deep electron traps labeled E2 (the energy level is not clear), E4 (0.7-0.8 eV), E5 (1.0-1.1 eV), were observed in n-GaN on Si substrate. And the concentrations of these traps observed for n-GaN on Si are very different from that observed for n-GaN on sapphire substrate. E4 is the dominant of these levels for n-GaN on Si substrate, and it is not related to linear array defect like dislocation line, but it behaves like point-defect based on the analysis by electron capture kinetics, in spite of having high dislocation density to the order of 10 10 cm -2 .

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Section: Hall C-v Xrd Measurementsupporting

confidence: 91%

“…Their energy position (E a ), capture cross section (σ), and trap concentration (N t ), are listed in Table II. A1 behaves like a "line defect" in the event of growth by MBE [9], E1 (0.5-0.62 eV) by MOVPE [10]. Our result corresponds to previous literature reports for deep levels, except for E5 [5][6][7][8][9][10][11][12].…”

Section: Hall C-v Xrd Measurementsupporting

confidence: 90%

Electron Traps in n-GaN Grown on Si (111) Substrates by MOVPE

2008

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High resolution Laplace deep level transient spectroscopy of p‐type polycrystalline diamond

Mitromara

Evans–Freeman

Gädtke

et al. 2008

Physica Status Solidi (a)

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High resolution Laplace deep level transient spectroscopy (LDLTS) has been used to characterise deep electronic states in the band gap of polycrystalline p‐type diamond. The thin diamond films were grown by the hot‐filament chemical vapour deposition (HFCVD) technique on p‐type and n‐type Si for the formation of the Schottky and p–n diodes respectively. The B concentration in the diamond films ranged from 7 × 1018 cm–3 to 7 × 1021 cm–3. Conventional capacitance DLTS showed a fairly narrow peak at about 180 K from the diamond grown on p‐type Si, but further analysis with LDLTS shows that this peak originates from a complex defect with up to three hole emission rates. In the case of the Schottky diode, these emission rates do not vary much with temperature which indicates that they may be due to the presence of an extended defect, where the valence band itself is changing its profile as the traps capture more carriers. LDLTS of a similar trap in the diamond grown on n‐type Si also shows three emission rates, which do not vary as expected with temperature. The results are discussed in terms of defects existing in the strain fields of grain boundaries, and exhibiting non point‐defect like properties. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Electronic Energy Levels in Group-III Nitrides

Palmer

2011

Comprehensive Semiconductor Science and Technology

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Deep electronic states associated with a metastable hole trap in n-type GaN

Cited by 6 publications

References 10 publications

Electron Traps in n-GaN Grown on Si (111) Substrates by MOVPE

Electron Traps in n-GaN Grown on Si (111) Substrates by MOVPE

High resolution Laplace deep level transient spectroscopy of p‐type polycrystalline diamond

Electronic Energy Levels in Group-III Nitrides

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