Deep Etched DBR Gratings in InP for Photonic Integrated Circuits

Docter, B.; Geluk, E.J.; Sander-Jochem, Mjh; Karouta, F.; Smit, M.K.

doi:10.1109/iciprm.2007.381164

Cited by 16 publications

(17 citation statements)

References 4 publications

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“…This means that if we are able to directly modulate a microring laser at 10 Gb/s, as calculated earlier, power consumption will be around 1 pJ/bit. The threshold current, and hence, the power consumption of the DBR laser can be significantly lowered by using a shorter cavity and possibly high-index contrast gratings [37]. Moreover, the modulation speed can be increased with a shorter cavity.…”

Section: ) Conclusionmentioning

confidence: 99%

Hybrid Silicon Photonics for Optical Interconnects

Heck

Chen

Fang

et al. 2011

IEEE J. Select. Topics Quantum Electron.

202

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Abstract-In this paper, we review the hybrid silicon photonic integration platform and its use for optical links. In this platform, a III/V layer is bonded to a fully processed silicon-on-insulator wafer. By changing the bandgap of the III/V quantum wells (QW), lowthreshold-current lasers, high-speed modulators, and photodetectors can be fabricated operating at wavelengths of 1.55 μm. With a QW intermixing technology, these components can be integrated with each other and a complete high-speed optical interconnect can be realized on-chip. The hybrid silicon bonding and process technology are fully compatible with CMOS-processed wafers because high-temperature steps and contamination are avoided. Full wafer bonding is possible, allowing for low-cost and large-volume device fabrication.

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Section: ) Conclusionmentioning

confidence: 99%

Hybrid Silicon Photonics for Optical Interconnects

Heck

Chen

Fang

et al. 2011

IEEE J. Select. Topics Quantum Electron.

202

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“…The Cr layer allows us to combine the e-beam lithography (EBL) pattern required for the DBR mirrors with the optical lithography pattern required for the waveguides. This combined lithography process is described in [20]. A 320-nm-thick ZEP e-beam resist is applied and the DBR patterns are written using a Raith 150 e-beam system using 30 kV acceleration voltage.…”

Section: Fabricationmentioning

confidence: 99%

Discretely Tunable Laser Based on Filtered Feedback for Telecommunication Applications

Docter

Pozo

Beri

et al. 2010

IEEE J. Select. Topics Quantum Electron.

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Abstract-A novel discretely tunable laser based on filtered feedback is presented. The semiconductor device consists of a FabryPerot laser with deeply etched broadband distributed Bragg reflector mirrors. Single-mode operation is achieved by using feedback from an integrated filter. This filter contains an arrayed waveguide grating wavelength router and a semiconductor optical amplifier gate array. Design, simulation, and the first characterization results of this new integrated filtered-feedback tunable laser device are presented. It shows a combination of a simple and robust switching algorithm with good wavelength stability. A rate equation model predicts that a properly designed device can switch within 1 ns. The fast switching and reduced control complexity makes the device very promising for various advanced applications in optical telecommunication networks.

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“…Finally, the deep etch to create the waveguides is performed by inductively coupled plasma ͑ICP͒ RIE using a Cl 2 :Ar:H 2 chemistry. 5 Figure 3 shows a scanning electron microscopy ͑SEM͒ image of the PhC waveguide after the ICP etch. The pillars are ϳ3.0 m deep.…”

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confidence: 99%

Transmission of pillar-based photonic crystal waveguides in InP technology

Kok

Geluk

Docter

et al. 2007

Applied Physics Letters

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Waveguides based on line defects in pillar photonic crystals have been fabricated in InP / InGaAsP / InP technology. Transmission measurements of different line defects are reported. The results can be explained by comparison with two-dimensional band diagram simulations. The losses increase substantially at mode crossings and in the slow light regime. The agreement with the band diagrams implies a good control on the dimensions of the fabricated features, which is an important step in the actual application of these devices in photonic integrated circuits.

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Deep Etched DBR Gratings in InP for Photonic Integrated Circuits

Cited by 16 publications

References 4 publications

Hybrid Silicon Photonics for Optical Interconnects

Hybrid Silicon Photonics for Optical Interconnects

Discretely Tunable Laser Based on Filtered Feedback for Telecommunication Applications

Transmission of pillar-based photonic crystal waveguides in InP technology

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