Deep-level centers in undoped p-GaAs layers grown by liquid phase epitaxy

Berman, L. S.; Danilchenko, V. G.; Корольков, В. И.; Soldatenkov, F. Yu.

doi:10.1134/1.1188024

Cited by 9 publications

(5 citation statements)

References 8 publications

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“…It is also essential that all three groups in the range of 350 K stable demonstrate the hole trap H2. In earlier studies, for example [9][10][11][12][13][14], in addition to background defects in the pin layers grown by LPE, typical hole traps A and B are present with activation energies E v = +0.41 eV and E v = +0.68 eV, respectively.…”

Section: Resultsmentioning

confidence: 91%

Analysis of deep level spectrum in GaAsp⁺-p-i-n-n⁺structures

Toompuu¹,

Sleptsuk²,

Korolkov³

et al. 2015

Materials Characterisation VII

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This paper is devoted to the analysis of Deep Level Transient Spectroscopy (DLTS) of the background deep levels in GaAs p + -p-i-n-n + structures. It is known that A and B centers are observed in epitaxial layers of GaAs, grown by LPE in a hydrogen atmosphere. These two deep acceptor levels determine the minority carrier lifetime and the reverse recovery time (t rr ) of rectifying devices respectively. The necessary switching time of GaAs rectifying devices is achieved by regulating the concentrations and the profile of A and B traps in pin layer. For undoped GaAs pin-structures with a thick i-layer, there is a problem in determining the direction of motion of the space charge boundaries upon application of reverse voltage to the diode structure. The boundary of the space charge region can propagate through i-layer and be displaced in p-and n-layer.To ensure the reliability of statistical significance were treated great number (appr.100 pc.) chips, provided for the experiment. Chips were divided into groups according to their technological features of production. The presented spectra exhibit evidence of the presence of deep levels of the hole and electron type in all samples. But within each group, the configuration of the spectra is similar. And for each configuration correspond a certain set of output parameter characteristic. This will provide an opportunity for express DLTS control of the finished product and can be realized in on-line monitoring of the LPE process in order to optimize the dynamic characteristics of the devices.

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Section: Resultsmentioning

confidence: 91%

Analysis of deep level spectrum in GaAsp⁺-p-i-n-n⁺structures

Toompuu¹,

Sleptsuk²,

Korolkov³

et al. 2015

Materials Characterisation VII

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“…Using the method proposed in [4] we can pick out the total concentration of deep levels in the band gap. As seen from the DLTS spectra (Fig.…”

Section: Resultsmentioning

confidence: 99%

Analysis of Deep Level Centers in GaAs pin-Diode Structures

Korolkov

Toompuu

Rang

2013

ElAEE

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This paper presents an analysis of the DLTS (Deep Level Transient Spectroscopy) spectra of GaAs p +-pin-n + diodes. It is shown that the background spectrum of the deep levels is reproducible and depends on the liquid-phase epitaxy mode (LPE). The temperature dependence of the capacitancevoltage characteristics showed that the i layer is formed by compensation involving deep levels. The space charge covers the width of the i layer and spreads into the depletion p and n regions of the diode structures.

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“…However, despite a certain success, the results reached in improving the switching speed for power diodes based on Si or GaAs "homojunction" structures fail to fully satisfy the upto-date power electronics needs. The minimal switching time of about 30-50 ns was demonstrated for diodes with blocking voltage U b of about 400-600 V [13][14][15][16].…”

Section: A Fast Recovery Eepitaxial Diodes (Fred) For Pulsedmentioning

confidence: 99%

“…Numerous attempts have been made to decrease the switching time for high voltage power Si and GaAs diodes down to a nanosecond level (see, e.g., [13,14,15]). However, despite a certain success, the results reached in improving the switching speed for power diodes based on Si or GaAs "homojunction" structures fail to fully satisfy the upto-date power electronics needs.…”

Section: A Fast Recovery Eepitaxial Diodes (Fred) For Pulsedmentioning

confidence: 99%

Defect engineering for carrier lifetime control in high voltage GaAs power diodes

Козлов

Soldatenkov

Danilchenko

et al. 2014

25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014)

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The paper considers the physical basis for the technique of controllable defect formation at heterointerfaces and in the bulk of epitaxial GaAs layers in the process of isovalent doping. Results of studying crystal defects and their rearrangement depending on the isovalent doping modes in the process of epitaxial growth are presented. The main aspects of the defect influence on the charge carrier lifetime as well as on the diode structure blocking voltage are analyzed. Particular cases of the developed technique application for controllable defect formation in fabricating such GaAs-based devices as Hyper Fast Recovery Epitaxial Diodes and Drift Step Recovery Diodes are considered.Keywords-gallium arsenide, liquid phase epitaxy, crystal defects, charge carrier lifetime, isovalent doping, turn-off time, fast recovery epitaxial diode, rise time, step recovery diode.

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Deep-level centers in undoped p-GaAs layers grown by liquid phase epitaxy

Cited by 9 publications

References 8 publications

Analysis of deep level spectrum in GaAsp⁺-p-i-n-n⁺structures

Analysis of deep level spectrum in GaAsp⁺-p-i-n-n⁺structures

Analysis of Deep Level Centers in GaAs pin-Diode Structures

Defect engineering for carrier lifetime control in high voltage GaAs power diodes

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Deep-level centers in undoped p-GaAs layers grown by liquid phase epitaxy

Cited by 9 publications

References 8 publications

Analysis of deep level spectrum in GaAsp+-p-i-n-n+structures

Analysis of deep level spectrum in GaAsp+-p-i-n-n+structures

Analysis of Deep Level Centers in GaAs pin-Diode Structures

Defect engineering for carrier lifetime control in high voltage GaAs power diodes

Contact Info

Product

Resources

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Analysis of deep level spectrum in GaAsp⁺-p-i-n-n⁺structures

Analysis of deep level spectrum in GaAsp⁺-p-i-n-n⁺structures