Deep-Level Defects at Lattice-Mismatched GaAsSb/GaAs Interface

Wosiński, T.; Mąkοsa, A.; Raczyńska, J.

doi:10.12693/aphyspola.87.369

Cited by 6 publications

(7 citation statements)

References 5 publications

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“…The evolution of the holetrap spectrum as a result of Sb incorporation into the epilayer lattice has been described elsewhere. 7 The obtained electron-emission DLTS spectra for the investigated heterostructures are shown in Fig. 1.…”

Section: Deep Levels Caused By Misfit Dislocations In Gaassb/gaas Hetmentioning

confidence: 99%

“…First, incorporation of antimony into the Ga solution distinctly increases the ratio of the group V elements to gallium in the liquid. 7 Second, the EL2 defects can be created by moving dislocations 9 and a high density of misfit dislocations is actually generated at the interface during the epilayer growth. Third, the crystallization of our epilayers begins at the temperature of 850°C at which the maximum formation rate of the EL2 defects occurs.…”

Section: Deep Levels Caused By Misfit Dislocations In Gaassb/gaas Hetmentioning

confidence: 99%

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Deep levels caused by misfit dislocations in GaAsSb/GaAs heterostructures

Wosiński

Mąkοsa

Figielski

et al. 1995

Applied Physics Letters

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Two deep electron traps induced by lattice mismatch in relaxed GaAs1−xSbx layers (x=0% to 3%) grown by liquid phase epitaxy (LPE) on GaAs substrates have been revealed by means of deep-level transient spectroscopy. One of the traps, that shows nonstandard, logarithmic capture kinetics and whose energy level is tied to the valence-band edge, has been related to electron states associated with α dislocations. The other trap has been attributed to the EL2 defect and possible reasons of its unexpected formation in the LPE-grown layers are briefly discussed.

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Section: Deep Levels Caused By Misfit Dislocations In Gaassb/gaas Hetmentioning

confidence: 99%

Section: Deep Levels Caused By Misfit Dislocations In Gaassb/gaas Hetmentioning

confidence: 99%

Deep levels caused by misfit dislocations in GaAsSb/GaAs heterostructures

Wosiński

Mąkοsa

Figielski

et al. 1995

Applied Physics Letters

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“…Концентрации электронных ловушек были соответствен-но: 3.35 · 10 14 см −3 и 1.60 · 10 14 см −3 . Эти электронные ловушки близки по параметрам к глубокому уровню ED1, который наблюдался в работах [14,15] и свя-зывался с прорастающими дислокациями, образующи-мися вблизи интерфейсов гетероструктур InGaAs/GaAs и GaAsSb/GaAs. В GaAs p + −p 0 −i−n 0 -структуре элек-тронные ловушки не проявлялись.…”

Section: мм соболев фю солдатенковunclassified

“…5), обнаруженных в p 0 -слоях трех типов исследуемых с помощью метода DLTS p + −p 0 −i−n 0 -структур, показывает, что это не дефекты, подобные HL2, которые образуются в эпитаксиальных слоях GaAs. В работе [14,15] было сделано сообщение об обнаружении в эпитаксиальных слоях GaAs 1−x Sb x , полученных методом ЖФЭ, наряду с электронной ло-вушкой ED1, дырочной ловушки HD3 с активацион-ной энергией около 0.74 эВ. Эта дырочная ловушка приписывалась дислокациям несоответствия.…”

Section: мм соболев фю солдатенковunclassified

“…Их появление может сопровождаться формированием прорастающих через эпитаксиальный слой дислокаций. В работах [14,15], используя технику нестационарной спектроскопии глубоких уровней (DLTS) в гетерострук-турах In x Ga 1−x As/GaAs и GaAs 1−x Sb x /GaAs, выращен-ных методом ЖФЭ, были обнаружены глубокие уров-ни (ГУ) с энергией в запретной зоне (E V + 0.67 эВ) и (E C − 0.64 эВ). Эти уровни приписывались соответ-ственно дислокациям несоответствия и прорастающим дислокациям и могли действовать как центры рекомби-нации или ловушки для свободных носителей.…”

Section: Introductionunclassified

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Влияние глубоких уровней дислокаций в гетероэпитаксиальных InGaAs/GaAs и GaAsSb/GaAs p-i-n-структурах на время релаксации неравновесных носителей

Sobolev¹,

Солдатенков²

2018

Физика И Техника Полупроводников

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The results of an experimental study of the capacitance–voltage ( C – V ) characteristics and deep-level transient spectroscopy (DLTS) spectra of p ^+– p ^0– i – n ^0 homostructures based on undoped dislocationfree GaAs layers and InGaAs/GaAs and GaAsSb/GaAs heterostructures with homogeneous networks of misfit dislocations, all grown by liquid-phase epitaxy (LPE), are presented. Deep-level acceptor defects identified as HL 2 and HL 5 are found in the epitaxial p ^0 and n ^0 layers of the GaAs-based structure. The electron and hole dislocation-related deep levels, designated as, respectively, ED 1 and HD 3, are detected in InGaAs/GaAs and GaAsSb/GaAs heterostructures. The following hole trap parameters: thermal activation energies ( E _ t ), capture cross sections (σ_ p ), and concentrations ( N _ t ) are calculated from the Arrhenius dependences to be E _ t = 845 meV, σ _ p = 1.33 × 10^–12 cm^2, N _ t = 3.80 × 10^14 cm^–3 for InGaAs/GaAs and E _ t = 848 meV, σ _ p = 2.73 × 10^–12 cm^2, N _ t = 2.40 × 10^14 cm^–3 for GaAsSb/GaAs heterostructures. The concentration relaxation times of nonequilibrium carriers are estimated for the case in which dislocation-related deep acceptor traps are involved in this process. These are 2 × 10^–10 s and 1.5 × 10^–10 s for, respectively, the InGaAs/GaAs and GaAsSb/GaAs heterostructures and 1.6 × 10^–6 s for the GaAs homostructures.

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Misfit dislocation–related deep levels in InGaAs/GaAs and GaAsSb/GaAs p–i–n heterostructures and the effect of these on the relaxation time of nonequilibrium carriers

Sobolev

Soldatenkov

Shul’pina

2018

Journal of Applied Physics

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A study of deep levels in InGaAs/GaAs and GaAsSb/GaAs p0–i–n0 heterostructures with misfit dislocations and identification of the effective defects responsible for the significant (by up to a factor of 100) decrease in the relaxation time of nonequilibrium carriers in the base layers (and in the related reverse recovery time) of InGaAs/GaAs and GaAsSb/GaAs high-voltage power p-i-n diodes is reported. Experimental capacitance–voltage characteristics and deep-level transient spectroscopy spectra of p+–p0–i–n0–n+ homostructures based on undoped GaAs layers without misfit dislocations and InGaAs/GaAs and GaAsSb/GaAs heterostructures with a homogeneous network of misfit dislocations, all grown by liquid-phase epitaxy, are analyzed. Acceptor defects with deep levels HL2 and HL5 are identified in GaAs epitaxial p0 and n0 layers. Dislocation-related electron and hole deep traps designated as ED1 and HD3 are detected in InGaAs/GaAs and GaAsSb/GaAs heterostructures. The effective recombination centers in the heterostructure layers, to which we attribute the substantial decrease in the relaxation time of nonequilibrium carriers in the base layers of p-i-n diodes, are dislocation-related hole traps that are similar to HD3 and have the following parameters: thermal activation energy Et = 845 meV, carrier capture cross-section σp = 1.33 × 10−12 cm2, concentration Nt = 3.80 × 1014 cm−3 for InGaAs/GaAs and Et = 848 meV, σp = 2.73 × 10−12 cm2, and Nt = 2.40 × 1014 cm−3 for the GaAsSb/GaAs heterostructure. The relaxation time of the concentration of nonequilibrium carriers in the presence of dislocation-related deep acceptor traps similar to HD3 was estimated to be 1.1 × 10−10 and 8.5 × 10−11 s for, respectively, the InGaAs/GaAs and GaAsSb/GaAs heterostructures and 8.9 × 10−7 s for the GaAs homostructure. These data correspond to the relaxation times of nonequilibrium carriers in the base layers of GaAs, InGaAs/GaAs, and GaAsSb/GaAs high-voltage power p-i-n diodes.

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Deep-Level Defects at Lattice-Mismatched GaAsSb/GaAs Interface

Abstract: Lattice-mismatch-induced defects were studied by means of deep-level transient spectroscopy in high-purity GaAs 1-x Sbx layers (x = O to 3%)

Cited by 6 publications

References 5 publications

Deep levels caused by misfit dislocations in GaAsSb/GaAs heterostructures

Deep levels caused by misfit dislocations in GaAsSb/GaAs heterostructures

Влияние глубоких уровней дислокаций в гетероэпитаксиальных InGaAs/GaAs и GaAsSb/GaAs p-i-n-структурах на время релаксации неравновесных носителей

Misfit dislocation–related deep levels in InGaAs/GaAs and GaAsSb/GaAs p–i–n heterostructures and the effect of these on the relaxation time of nonequilibrium carriers

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