Deep level states and negative photoconductivity in n-ZnO/p-Si hetero-junction diodes

Cho, Seong Gook; Nahm, Tschang-Uh; Kim, Eun Kyu

doi:10.1016/j.cap.2013.11.026

Cited by 17 publications

(12 citation statements)

References 16 publications

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“…The band gap values of n-Si was also found to be 1.12 eV. The electron affinities χ of p-InGaN and n-Si were 4.20 eV and 4.05 eV, respectively [6,24]. According to the band gap values of p-In 0.5 Ga 0.95 N and n-Si (2.92 and 1.12 eV), the barrier ∆E c for electrons was followed by ∆E c = χ p-InGaN − χ Si and the barrier ∆E v for holes was calculated by Figure 2).…”

Section: Structural and Electrical Characteristicsmentioning

confidence: 86%

“…This method was chosen to design diodes due to the benefits of low sputtered-temperature, low cost, and safe working atmosphere [7,13,15]. The n-Si (100) wafer was also used for its low cost, large wafer size, and easy availability [18,22,24]. The electrical characteristics of devices were calculated by the thermionic emission (TE) mode at different testing temperatures [3,12,13].…”

Section: Gan and Ingan Have Excellent Characteristics Such As High Comentioning

confidence: 99%

“…According to the band gap values of p-In 0.5 Ga 0.95 N and n-Si (2.92 and 1.12 eV), the barrier ∆E c for electrons was followed by ∆E c = χ p-InGaN − χ Si and the barrier ∆E v for holes was calculated by Figure 2). As a result, the energy band diagram showed a small conduction band offset of 0.15 eV and a large valance band offset of 1.95 eV [22,[24][25][26]. Therefore, the electrons' injection from n-Si into p-In x Ga 1−x N will be easier than the holes' injection from p-In x Ga 1−x N into n-Si because the energetic barrier ∆E v of holes is many times higher than the barrier ∆E c of electrons.…”

Section: Structural and Electrical Characteristicsmentioning

confidence: 99%

“…The current densities and the leakage current densities are found in the area of 1 cm 2 . offset of 1.95 eV [22,[24][25][26]. Therefore, the electrons' injection from n-Si into p-InxGa1−xN will be easier than the holes' injection from p-InxGa1−xN into n-Si because the energetic barrier ΔEv of holes is many times higher than the barrier ΔEc of electrons.…”

Section: Structural and Electrical Characteristicsmentioning

confidence: 99%

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Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

et al. 2019

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The modeling of p–InxGa1−xN/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In0.05Ga0.95N were deposited directly on the n–Si (100) wafer by the RF reactive sputtering at 400 °C with single cermet targets. Al and Pt with the square size of 1 mm2 were used for electrodes of p–InxGa1−xN/n–Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be Np = 3.45 × 1016 cm−3 and µ = 145 cm2/V·s for p–GaN film, Np = 2.53 × 1017 cm−3, and µ = 45 cm2/V·s for p–InGaN film. By the I–V measurement at RT, the leakage currents at −5 V and turn-on voltages were found to be 9.31 × 10−7 A and 2.4 V for p–GaN/n–Si and 3.38 × 10−6 A and 1.5 V for p–InGaN/n–Si diode. The current densities at the forward bias of 20 V were 0.421 and 0.814 A·cm−2 for p–GaN/n–Si and p–InGaN/n–Si devices. The electrical properties were measured at the temperature range of 25 to 150 °C. By calculating based on the TE mode, Cheungs’ and Norde methods, and other parameters of diodes were also determined and compared.

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Section: Structural and Electrical Characteristicsmentioning

confidence: 86%

Section: Gan and Ingan Have Excellent Characteristics Such As High Comentioning

confidence: 99%

Section: Structural and Electrical Characteristicsmentioning

confidence: 99%

Section: Structural and Electrical Characteristicsmentioning

confidence: 99%

See 2 more Smart Citations

Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

et al. 2019

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“…Therefore, some researchers speculated that these electrochromic materials could be used in energy-storable solar cells. [32][33][34][35][36][37][38] Terakado et al 39 reported an erasable photochromic bilayer metal oxide film of tin oxide and magnesium oxide. In their paper, they inferred absorption or scattering for electrochromic phenomenon.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of photochromic nanoparticles and determination of the mechanism of photochromism

et al. 2016

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Photochromic nanoparticles of zinc-silicon oxide were synthesized using plasma enhanced chemical vapor deposition. These particles turned black upon irradiating with ultraviolet light. We investigated this phenomenon using density functional theory calculations. Silicon inclusions create trap levels and oxygen defects that reduce the ionization potential of ZnO. This forms a quantum potential between ZnO and zinc-silicon oxide, and the excited electron is stable. Because oxygen defects also increase the bond overlap population between the zinc atoms in a ZnO crystal, they introduce further defects and help in the formation of quantum potentials. Growth of a perfect crystal of ZnO prevents the formation of oxygen defects, which is not desirable for photochromism.

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Synthesis and characterization of nickel oxide nanoparticles decorated graphene oxide for fast-response UV photodetector: unveiling of negative photoconductance

Walleni,

Hamdaoui,

Fadil

et al. 2024

J Mater Sci: Mater Electron

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Deep level states and negative photoconductivity in n-ZnO/p-Si hetero-junction diodes

Cited by 17 publications

References 16 publications

Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

Synthesis of photochromic nanoparticles and determination of the mechanism of photochromism

Synthesis and characterization of nickel oxide nanoparticles decorated graphene oxide for fast-response UV photodetector: unveiling of negative photoconductance

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