Deep level transient spectroscopy (DLTS) of a poly(p-phenylene vinylene) Schottky diode

Campbell, Alasdair J.; Bradley, Donal D. C.; Werner, Ekkehard; Brütting, Wolfgang

doi:10.1016/s0379-6779(99)00446-4

Cited by 46 publications

(25 citation statements)

References 8 publications

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“…The trap densities have been determined to be 15 , where n h is the hole concentration in shallow acceptor levels, ΔC the transient capacitance change due to a saturating injection pulse, and C o the specimen steady-state capacitance. The densities of deep-level traps -A 1 , A 2 , A 3 , and B 1 -evaluated by using this equation and employing the hole concentration of 1.7Ý 10 16 cm -3 , 14 were approximately 4.2Ý 10 15 , 9.6Ý10 14 , 6.5Ý10 15 , and 2.6 Ý10 14 cm -3 , respectively.…”

Section: Resultsmentioning

confidence: 99%

Preparation and electronic defect characteristics of pentacene organic field effect transistors

Yang

Zyung

2002

Macromol. Res.

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Organic materials have considerable attention as active semiconductors for device applications such as thin-film transistors (TFTs) and diodes. Pentacene is a p-type organic semiconducting material investigated for TFTs. In this paper, we reported the morphological and electrical characteristics of pentacene TFT films. The pentacene transistors showed the mobility of 0.8 cm 2 /Vs and the grains larger than 1 μm. Deep-level transient spectroscopy (DLTS) measurements were carried out on metal/insulator/organic semiconductor structure devices that had a depletion region at the insulator/organic-semiconductor interface. The duration of the capacitance transient in DLTS signals was several ten of seconds in the pentacene, which was longer than that of inorganic semiconductors such as Si. Based on the DLTS characteristics, the energy levels of hole and electron traps for the pentacene films were approximately 0.24, 1.08, and 0.31 eV above E v , and 0.69 eV below E c .

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Section: Resultsmentioning

confidence: 99%

Preparation and electronic defect characteristics of pentacene organic field effect transistors

Yang

Zyung

2002

Macromol. Res.

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“…The organic/inorganic semiconductor structures can be sensitive probe useful in establishing process for minimizing interface states, surface damages, dislocations and contaminations that may ultimately increase the quality of devices fabricated using the semiconductor. There are many reports about Schottky diodes with polymeric interfacial layer [8][9][10][11][12][13][14][15]. Among the various polymers, polyvinyl alcohol, polyaniline, poly(alkylthiophene) polypyrrole, polyophene, poly(3-hexylthiophene) became an attractive research topic due to their potential applications and interesting properties by chemists, physicists and electrical engineers alike.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni,Zn-doped)/n-Si Schottky diodes

Dökme

Altındal

Tunç

et al. 2010

Microelectronics Reliability

127

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“…The existence of these continuous energy trap states was mentioned with various energy density of states (DOS). The functional dependence can be for example exponential, single gaussian or multiple gaussian [2][3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Small‐signal characteristics of organic semiconductors with continuous energy distribution of traps

Schmeits

Nguyen

2005

Physica Status Solidi (a)

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The electrical characteristics of organic light emitting devices containing a continuous distribution of trap states in the forbidden gap are obtained by numerically solving the basic semiconductor equations for the steady state and under small-signal conditions. The spatially-dependent occupied trap states, which are described by an explicit density of states function, modify the charge distribution within the structure and the shape of the electric field and the carrier current densities. The effect of the modulation frequency, the applied voltage and the device temperature are studied for a hole conducting layer with a trap density of states consisting of a double gaussian profile and for a given set of microscopic parameters including the carrier mobilities and thermal velocities, the capture cross sections, and the residual shallow impurity concentration. The frequency-dependent loss and capacitance curves are obtained for various experimental conditions, like temperature and applied steady-state voltage. Effects of parameters describing electrical contacts and trap density of states are shown. Such results are particularly useful for the analysis of experimental electrical characteristics obtained by thermal admittance spectroscopy.

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Deep level transient spectroscopy (DLTS) of a poly(p-phenylene vinylene) Schottky diode

Cited by 46 publications

References 8 publications

Preparation and electronic defect characteristics of pentacene organic field effect transistors

Preparation and electronic defect characteristics of pentacene organic field effect transistors

Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni,Zn-doped)/n-Si Schottky diodes

Small‐signal characteristics of organic semiconductors with continuous energy distribution of traps

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