Deep level transient spectroscopy studies of epitaxial silicon layers on silicon-on-insulator substrates formed by oxygen implantation

McLarty, P.K.; Cole, Jordan; Galloway, K.F.; Ioannou, D.E.; Bernacki, S. E.

doi:10.1063/1.98745

Cited by 20 publications

(5 citation statements)

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“…Considering the aforementioned results on SIMOX SOI layers wherein the deep levels are completely annealed out when the annealing temperature is higher than 1250ЊC, [5][6][7] the observations in this work are rather contradictory. However, it should be noted that there are big differences in the sample structure and thermal cycles involved after oxygen implantation when compared to the previous works.…”

Section: Resultsmentioning

confidence: 62%

“…The high-temperature annealing behaviors of deep levels in the SIMOX SOI layer have been studied in previous research. [5][6][7][8][9] At annealing temperatures higher than 1300ЊC, it has been reported that the physical defects, which could be associated with deep levels in the SOI layer, completely disappeared. However, most research investigated deep levels in thick (>0.4 m) epitaxially grown SIMOX SOI layers.…”

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confidence: 99%

“…For a thick, epitaxially grown SIMOX SOI layer, McLarty et al observed two deep levels: one at 0.34 eV below the conduction bandedge (E c Ϫ0.34 eV) for a 1150ЊC annealed sample and the other at 0.32-0.37 eV below the conduction bandedge for a 1250ЊC annealed sample. 5 Chen and Li also observed a similar deep level at E c Ϫ0.31 eV for a 1150ЊC annealed sample, and this deep level disappeared at an annealing temperature of 1250ЊC. 6 The effects of oxidation on deep levels in a thick, epitaxially grown SIMOX SOI layer were also investigated by McLarty et al 7 The SIMOX SOI sample was oxidized after high-temperature annealing at 1150ЊC, and they observed two deep levels at E c Ϫ 0.33 and Ϫ0.45 eV.…”

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confidence: 99%

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Effect of High‐Temperature Annealing on Deep Levels in Thin Silicon‐on‐Insulator Layers Separated by Implanted Oxygen

Kang

Ahn

et al. 1999

J. Electrochem. Soc.

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The effects of high-temperature annealing on physical and electrical defects are investigated for a silicon-on-insulator (SOI) layer formed by separation by implanted oxygen (SIMOX). After oxygen implantation, the SIMOX SOI wafers were annealed at different temperatures in an Ar ϩ 0.5% O 2 ambient. The oxygen precipitations in the SOI layer were completely dissolved at 1310ЊC. Three electrical deep levels at 0.33 eV (D1), 0.40 eV (D2), and 0.48eV (D3) from the conduction bandedge were observed, regardless of annealing temperature. The concentrations of D1 and D2 were inversely proportional to the size of the oxygen precipitations. When the SOI layer, which was subjected to annealing at 1310ЊC, was subsequently annealed at 1000ЊC in an O 2 ambient, D1 and D2 disappeared, while D3 was unaffected. The sources of these deep levels were identified as small dislocation loops for D1, vacancies for D2, and threading dislocations for D3.

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Section: Resultsmentioning

confidence: 62%

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confidence: 99%

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confidence: 99%

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Effect of High‐Temperature Annealing on Deep Levels in Thin Silicon‐on‐Insulator Layers Separated by Implanted Oxygen

Kang

Ahn

et al. 1999

J. Electrochem. Soc.

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“…3,4 Low-energy oxygen ions (¾0.1-20 keV) also are employed in SIMS to determine the depth distribution of impurities in semiconductors. The formation of a stoichiometric surface oxide layer may cause the redistribution of the impurity species being profiled, and hence degrade the depth resolution.…”

Section: Introductionmentioning

confidence: 99%

“…1,2 It is, however, well known that the use of ion implantation in the formation of SIMOX SOI creates damage in the Si lattice, which is stable even after annealing. 3,4 Low-energy oxygen ions (¾0.1-20 keV) also are employed in SIMS to determine the depth distribution of impurities in semiconductors. The formation of a stoichiometric surface oxide layer may cause the redistribution of the impurity species being profiled, and hence degrade the depth resolution.…”

Section: Introductionmentioning

confidence: 99%

Effect of rapid thermal annealing on the electrical properties of ion‐beam‐synthesized oxide layers using 12 keV O₂⁺ bombardment of Si

Deenapanray¹

2001

Surface & Interface Analysis

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• incidence in a SIMS instrument. The oxide layers were annealed at 950• C for 3, 6 or 8.5 min under Ar flow in a rapid thermal annealer. Temperature-dependent current-voltage (I -V -T) measurements were used in order to establish both the dielectric quality and the current transport mechanisms across the dielectric layers. Annealing for 8.5 min doubled the breakdown voltage while decreasing the leakage current by a factor of ∼18. The ohmic quality of the layers for the low field strengths decreased with the increasing annealing time, which is related to the removal of implantation damage as observed by high-resolution RBS measurements. For the high field strengths, the tunnelling effect was most dominant for the oxide annealed for 8. INTRODUCTIONThe ion beam oxidation of Si using low-energy oxygen ions constitutes an area of both technological and basic scientific interest. Ion beam synthesis of SiO 2 layers has been employed successfully for the fabrication of semiconductoron-insulator (SOI) structures. Ultra-large-scale integration poses stringent demands on the production of SIMOX (separation by implanted oxygen structures) layers with high-quality thin Si overlayers that can be used for further epitaxial growth. One way to achieve this is through the implantation of low-energy (¾20 keV) oxygen ions followed by high-temperature annealing.1,2 It is, however, well known that the use of ion implantation in the formation of SIMOX SOI creates damage in the Si lattice, which is stable even after annealing. 3,4 Low-energy oxygen ions (¾0.1-20 keV) also are employed in SIMS to determine the depth distribution of impurities in semiconductors. The formation of a stoichiometric surface oxide layer may cause the redistribution of the impurity species being profiled, and hence degrade the depth resolution. We have studied recently the segregation Ł Correspondence to: P. N. K. Deenapanray, Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200, Australia. E-mail: pnk109@rsphysse.anu.edu.au Contract/grant sponsor: Professor C. Jagadish. behaviour of several ion-implanted impurities in both n-and p-type Si wafers of different resistivities.5 -7 The anomalous redistribution of impurities during the formation of an SiO 2 layer can, amongst others, be explained by the thermodynamically driven and electric-field-driven segregation effects. -7The formation of a shallow buried SiO 2 layer during low-energy oxygen ion implantation involves several, often competing, processes such as the simultaneous implantation of oxygen ions below the Si surface and the sputter removal of the top surface layer, determined primarily by the ion energy and angle of incidence. 8 -10 In brief, the implanted oxygen ions build up to a threshold level when a buried SiO 2 layer is formed. Oxygen in excess of this threshold level rapidly diffuses out of the SiO 2 layer to react with free Si at the Si/SiO 2 interfaces. Simultaneous sputtering of the Si sur...

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Acoustic Deep-Level Transient Spectroscopy of MIS Structures

Bury

Jamnický

Durcek

1991

Phys. Stat. Sol. (a)

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A new method of determining and characterization of traps at the insulator‐semiconductor interface is presented. This method, acoustic deep‐level transient spectroscopy (A‐DLTS), is based on the acoustoelectric response effect observed at the interface. A theoretical analysis of the acoustoelectric transient measurements in accordance to capacitance ones is also presented. The temperature dependence of the acoustoelectric response after bias voltage step application is investigated and the activation energies are calculated. Some other parameters of interface traps are also determined. The method is verified by the investigation of both, n‐ and p‐type SiO2Si interface states.

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Deep level transient spectroscopy studies of epitaxial silicon layers on silicon-on-insulator substrates formed by oxygen implantation

Cited by 20 publications

References 3 publications

Effect of High‐Temperature Annealing on Deep Levels in Thin Silicon‐on‐Insulator Layers Separated by Implanted Oxygen

Effect of High‐Temperature Annealing on Deep Levels in Thin Silicon‐on‐Insulator Layers Separated by Implanted Oxygen

Effect of rapid thermal annealing on the electrical properties of ion‐beam‐synthesized oxide layers using 12 keV O₂⁺ bombardment of Si

Acoustic Deep-Level Transient Spectroscopy of MIS Structures

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Deep level transient spectroscopy studies of epitaxial silicon layers on silicon-on-insulator substrates formed by oxygen implantation

Cited by 20 publications

References 3 publications

Effect of High‐Temperature Annealing on Deep Levels in Thin Silicon‐on‐Insulator Layers Separated by Implanted Oxygen

Effect of High‐Temperature Annealing on Deep Levels in Thin Silicon‐on‐Insulator Layers Separated by Implanted Oxygen

Effect of rapid thermal annealing on the electrical properties of ion‐beam‐synthesized oxide layers using 12 keV O2+ bombardment of Si

Acoustic Deep-Level Transient Spectroscopy of MIS Structures

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Effect of rapid thermal annealing on the electrical properties of ion‐beam‐synthesized oxide layers using 12 keV O₂⁺ bombardment of Si