Deep Levels in GaN

Narita, Toshio; Tokuda, Yutaka

doi:10.1063/9780735422698_003

Cited by 4 publications

(2 citation statements)

References 108 publications

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“…A time constant >10 s was extracted from the turn-off transient. The prolonged device turn-off can be attributed to the epi and interfacerelated deep-level traps [25], [29], [30]. Due to the depleted space-charge regions, photogenerated carriers are spatially separated.…”

Section: Resultsmentioning

confidence: 99%

First Demonstration of Optically-Controlled Vertical GaN finFET for Power Applications

Hsia,

Perozek,

Palacios

2024

IEEE Electron Device Lett.

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In this work, we propose a novel optically-controlled vertical GaN finFET directly triggered by low-power ultraviolet (UV) illumination. The proposed device consists of a normally-off, vertical GaN finFET with an optically transparent illumination window. Electron-hole pairs are generated in the depleted fin channel upon 365 nm illumination to turn on the device. The operating principle of optically-controlled, vertical finFETs was first confirmed through simulations where 5 orders of magnitude on-off current ratio were predicted under an illumination intensity of 30 mW/cm 2 . The proposed devices were then experimentally demonstrated with an on-current density greater than 90 A/cm 2 at V DS = 3 V, triggered by a few µWs of UV LED power. Despite having relatively high dark currents, the devices have shown maximum optical responsivity greater than 10 5 A/W owing to the strong photovoltaic effects in the highly scaled fins. These initial results demonstrate the potential of our proposed device to enable future high-power systems with greatly enhanced electromagnetic interference (EMI) immunity, simplicity, cost-effectiveness, and reliability.

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Section: Resultsmentioning

confidence: 99%

First Demonstration of Optically-Controlled Vertical GaN finFET for Power Applications

Hsia,

Perozek,

Palacios

2024

IEEE Electron Device Lett.

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“…The level with the energy of 0.22 eV in the conduction band was interpreted as defect complexes along filamentary dislocations, such as divacancies (V Ga V N ) [34]. The level with the energy of 0.45 eV is treated as a point isolated defect, which is observed in GaN layers n-type grown by different methods [35].…”

Section: Analysis Of Tunnel-recombination Processesmentioning

confidence: 99%

Tunneling recombination in GaN/InGaN LEDs with a single quantum well

Bulyarsky,

Vostretsova,

Ribenek

2024

Nanosystems: Phys. Chem. Math.

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The paper proposes an analytical model of tunneling-recombination processes with forward and reverse displacements in InGaN/GaN-based structures containing a quantum well, assuming that the processes of generation and recombination are complex, while one of the stages of the transition of the charge carrier to the center is tunneling. Comparing the model with the experiment allowed us to determine the energies of the recombination centers of 0.22 and 0.45 eV. These energies may correspond to centers formed by defect complexes along filamentous dislocations, such as divacansions (V Ga V N ), and a point isolated defect observed in n-type GaN layers grown by various methods, respectively.

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Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques

Gallagher

Ebrish

Porter

et al. 2022

Sci Rep

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To improve the manufacturing of vertical GaN devices for power electronics applications, the effects of defects in GaN substrates need to be better understood. Many non-destructive techniques including photoluminescence, Raman spectroscopy and optical profilometry, can be used to detect defects in the substrate and epitaxial layers. Raman spectroscopy was used to identify points of high crystal stress and non-uniform conductivity in a substrate, while optical profilometry was used to identify bumps and pits in a substrate which could cause catastrophic device failures. The effect of the defects was studied using vertical P-i-N diodes with a single zone junction termination extention (JTE) edge termination and isolation, which were formed via nitrogen implantation. Diodes were fabricated on and off of sample abnormalities to study their effects. From electrical measurements, it was discovered that the devices could consistently block voltages over 1000 V (near the theoretical value of the epitaxial layer design), and the forward bias behavior could consistently produce on-resistance below 2 mΩ cm2, which is an excellent value considering DC biasing was used and no substrate thinning was performed. It was found that high crystal stress increased the probability of device failure from 6 to 20%, while an inhomogeneous carrier concentration had little effect on reverse bias behavior, and slightly (~ 3%) increased the on-resistance (Ron). Optical profilometry was able to detect regions of high surface roughness, bumps, and pits; in which, the majority of the defects detected were benign. However a large bump in the termination region of the JTE or a deep pit can induce a low voltage catastrophic failure, and increased crystal stress detected by the Raman correlated to the optical profilometry with associated surface topography.

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Deep Levels in GaN

Cited by 4 publications

References 108 publications

First Demonstration of Optically-Controlled Vertical GaN finFET for Power Applications

First Demonstration of Optically-Controlled Vertical GaN finFET for Power Applications

Tunneling recombination in GaN/InGaN LEDs with a single quantum well

Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques

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