Deep Levels of High Resistivity Sb Doped CdTe

Iwamura, Yasuo; Yamamori, Shuhki; Negishi, Hitoshi; Moriyama, Makoto

doi:10.1143/jjap.24.361

Cited by 20 publications

(2 citation statements)

References 4 publications

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“…Impurities of V group (Р, Аs) in CdTe crystals are shallow acceptors [14]. This provides comparatively high conductivity of this material, and Sb doping provides the possibility of obtaining semiisolating material where the conductivity is controlled by deep acceptors with energy separated levels [15]. The latter is attractive from the viewpoint of improving the electrophysical properties of Cd x Hg 1−x Te epitaxial layers.…”

Section: Results Of Researchesmentioning

confidence: 99%

Solid state doping of CdxHg1-xTe epitaxial layers with elements of V group

Barcz¹,

Franko²

2006

Semicon. Phys., Quantum Electron. Optoelectron.

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Presented here are the results of studying the controlled doping with elements of V group of the periodic table, arsenic As and antimony Sb, of narrow gap Cd x Hg 1−x Te epitaxial layers during the isothermal growth from the vapour phase by the evaporationcondensation-diffusion method. Three types of impurity sources have been used for solid state doping: homogeneously doped with As(Sb) single crystal substrates of CdTe, As doped buffer Cd y Hg 1−y Te (y > x) epitaxial layers obtained by RF sputtering in mercury glow discharge onto undoped CdTe substrates, and As(Sb) implanted undoped CdTe substrates. The results of comparative analysis of galvano-magnetic measurements and SIMS spectra indicated very high, practically nearly ~100 %, electrical activity of dopants in the Cd x Hg 1−x Te epitaxially grown layers.

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Section: Results Of Researchesmentioning

confidence: 99%

Solid state doping of CdxHg1-xTe epitaxial layers with elements of V group

Barcz¹,

Franko²

2006

Semicon. Phys., Quantum Electron. Optoelectron.

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“…CdTe solar cells using P-doped bulk crystals as the absorber layer and exhibiting V OC >1 V have been reported [14], providing strong evidence for the approach. The group-V elements of N, P, As, Sb and Bi substituting on Te sites create single acceptor levels with ionization energies close to 56, 68, 92, and 300 from experimental [15,16,17] and 10, 50, 100, 230 and 300 meV from theoretical studies, respectively [5]. Although the N Te acceptor has the lowest ionization energy, it is practically very difficult to incorporate into II-VI compounds except by using low temperature epitaxy.…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method

Nagaoka

Han

Misra

et al. 2017

Journal of Crystal Growth

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We report the growth of p-type As-doped, Cd-rich CdTe single crystals using metallic Cd as the solvent in the traveling-heater method. We investigate the growth process from Cd solution in terms of the solid-liquid interface shape and the effects of As incorporation on p-type doping. The resulting CdTe crystals have Cd-rich composition which enhances p-type doping. The As doping efficacy was measured for As concentrations by the combination of inductively coupled plasma mass spectrometry, capacitance-voltage measurements. The p-type doping concentration varied from 6x10 15 to 8x10 16 cm-3 with increasing As concentration, with an apparent doping limit just below 10 17 cm-3 .

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Surface nuvleation kinetics of molecular beam epitaxial doped (001) and (111) CdTe

Benson

Summers

1988

Journal of Crystal Growth

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Deep Levels of High Resistivity Sb Doped CdTe

Cited by 20 publications

References 4 publications

Solid state doping of CdxHg1-xTe epitaxial layers with elements of V group

Solid state doping of CdxHg1-xTe epitaxial layers with elements of V group

Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method

Surface nuvleation kinetics of molecular beam epitaxial doped (001) and (111) CdTe

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