Surface nuvleation kinetics of molecular beam epitaxial doped (001) and (111) CdTe

Benson, J. D.; Summers, Christopher J.

doi:10.1016/0022-0248(90)90742-4

Cited by 27 publications

(2 citation statements)

References 16 publications

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“…A possible reason is that the iodine covalent radius ͑1.405 Å͒ is identical to that of tellurium whereas indium ͑1.405 Å͒ which substitutes for Cd or Zn atoms has a covalent radius identical to that of Cd but much larger than that of Zn ͑1.225 Å͒. 12 Then, due to the segregation phenomenon which is generally observed when the substituting atoms are larger than the atoms of the matrix, 13,14 incorporation of In in the cation sites is expected to be rather difficult as compared to the incorporation of I in the Te sites. A similar argument based on the size of the dopants atoms has been recently developed for the case of CdMgTe alloys in order to explain the higher doping levels obtained with iodine as compared with chlorine and bromine.…”

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confidence: 98%

Iodine doping of CdTe and CdZnTe layers grown by molecular beam epitaxy

Brun‐Le‐Cunff

Baron

Daudin

et al. 1995

Applied Physics Letters

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confidence: 98%

Iodine doping of CdTe and CdZnTe layers grown by molecular beam epitaxy

Brun‐Le‐Cunff

Baron

Daudin

et al. 1995

Applied Physics Letters

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“…This gives further supporting evidence that the illumination in the PAMBE process changes the surface stoichiometry. It has been reported that illumination of CdTe surfaces leads to a decrease in the surface lifetime of tellurium [15,16]. The decrease in the surface lifetime of tellurium would lead to a relative increase of the Cd to Te ratio, similar to the use of an excess Cd source.…”

Section: Illumination Intensity Variationmentioning

confidence: 97%

Recent progress in device-oriented II-VI research at the University of Wuerzburg

et al. 1991

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Interest in CdTe field effect transistors and multi-gated devices stems from the fact that CdTe is lattice matched to HgCdTe. As a consequence, it may be possible to develop a monolithic technology that combines HgCdTe infrared focal plane arrays with on-board signal processing based on CdTe devices. Although CdTe metal-semiconductor field effect transistors have only recently been fabricated, rapid improvement in device performance has been achieved. All the devices reported have been fabricated from CdTe:In epilayers grown by Photoassisted Molecular Beam Epitaxy. We report on devices having gold Schottky barrier with reverse breakdown voltages as high as 28.0 V and ideality factors near 1.7. These MESFETs exhibit good depleting mode action.

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