Deep Levels of Zn-Doped p-GaSe

Rational design of transparent p-type conducting non-oxide materials from high-throughput calculations

“…Zn Ga and P Se defects created shallow acceptor levels. It has been shown experimentally that Zn enhances the hole conductivity of GaSe, 63 which is also evident from our calculations.…”

Schottky barriers on anisotropic semiconductor GaTe

“…The Al-GaSe and Au-GaSe barrier heights were found to be 1.08 and 0.52 eV respectively. These and deep-level transient spectroscopy (DLTS) studies by Shigetomi, Ikari, Nakashima and Nishimura (1991) o n p-GaSe and Mari, Segura, Casanovas and Chevy (1991) on n-InSe (E, = 1.8 eV) were all made with the metal deposited on the semiconductor layer planes. The present experiments are thus the first to examine Schottky barriers on layered semiconductors along two orthogonal directions.…”

Tin-related double acceptors in gallium selenide single crystals

“…The problem of doping, that was investigated early without drawing definitive conclusions, [8][9][10][11][12][13] has been recently approached by other groups that have specially studied the influence of impurities from groups I and II as acceptors in GaSe. [14][15][16][17][18][19][20][21] Room temperature hole concentrations of the order of 10 15 -10 16 cm Ϫ3 have been reported by doping with Cd, 17 Zn, 18 Cu, 19 and Ag. 20 Activation energies for hole concen-tration are of the order of 300 meV for Cd, 17 Zn, 18 or Mn 21 doped GaSe, of the order of 40 and 140 meV for Cu-doped samples, 19 and of the order of 60 meV for Ag-doped samples.…”