Deep levels, transport and THz emission properties of SiGe/Si quantum-well structures

Antonova, I. V.; Kagan, M. S.; Neustroev, E. P.; Smagulova, S. A.

doi:10.1007/s11431-009-0023-6

Sci. China Ser. E-Technol. Sci.

2009

DOI: 10.1007/s11431-009-0023-6

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Deep levels, transport and THz emission properties of SiGe/Si quantum-well structures

I. V. Antonova

M. S. Kagan

E. P. Neustroev

et al.

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Cited by 3 publications

(2 citation statements)

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“…With significant media attention focused on nanoscience and nanotechnology in recent years, materials science has been propelled to the forefront at many universities. Materials science encompasses various classes of materials, including electronic materials, functional ceramics, magnesium, material and processes for flat-panel displays, eco/environmental materials, sustainable energy materials, transportation materials, electronic packaging materials, etc.The field of electronic materials is of extraordinary importance to technology and society given the pervasiveness of electronic devices in day-to-day life [1][2][3][4][5][6][7][8][9][10][11]. Particular areas of interest focus on material science and technologies of relevace to silicon processing technologies and future scaling approaches.…”

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confidence: 99%

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Focuses of material science development in recent years

Jing

2011

Sci. China Technol. Sci.

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Materials science is an interdisciplinary field applying the properties of matter to various areas of science and engineering. This scientific field investigates the relationship between the structure of materials at atomic or molecular scales and their macroscopic properties. It incorporates elements of applied physics and chemistry. With significant media attention focused on nanoscience and nanotechnology in recent years, materials science has been propelled to the forefront at many universities. Materials science encompasses various classes of materials, including electronic materials, functional ceramics, magnesium, material and processes for flat-panel displays, eco/environmental materials, sustainable energy materials, transportation materials, electronic packaging materials, etc.The field of electronic materials is of extraordinary importance to technology and society given the pervasiveness of electronic devices in day-to-day life [1][2][3][4][5][6][7][8][9][10][11]. Particular areas of interest focus on material science and technologies of relevace to silicon processing technologies and future scaling approaches. Studies of nanoscale phenomena in electronic materials are particularly pertinent. For example, Antonova et al.[1] studied the passivating effects of organic monolayers of 1-octadecene deposited onto the silicon surfaces of both n and p conductivities for Si/SiGe/ Si structures grown by molecular beam epitaxy and chemical vapor deposition. The results demonstrated that the organic passivation provides a decrease of surface charge and an increase of carrier concentration in the near-surface layers and/or the SiGe quantum wells. Wang et al.[2] synthesized silicon nitride nanowires and nanotudes from a binary solgel route, in which tetraethoxysilane (TEOS) and phenolic resin were used to prepare a carbonaceous silica xerogel and ferric nitrate was employed as additive. The results showed that the sample mainly consisted of -Si 3 N 4 nanowires with a few of nanotubes. Both the nanowires and nanotubes have a diameter of 30-100 nm and a length of hundreds microns. Liquid droplets were also found at the tip of the nanowires, and this indicated that the growth of the nanowires and nanotubes followed the vapor-liquid-solid (VLS) mechanism. Ahmad et al.[4] investigated one-step synthesis route of the aligned and non-aligned single crystalline -Si 3 N 4 nanowires. This method is a simple and one-step procedure to synthesize the bulk-quantity and high-purity aligned and non-aligned -Si 3 N 4 NWs at a relatively low temperature.The field of functional ceramics is driven by applications in many key technologies, including microelectronics, communications, energy conversion, and automation [12][13][14][15][16][17][18][19][20][21][22]. The focus of research is on the understanding of the structure-processing-property relationships. For instance, Bokov et al. [12] considered the crystal structure including quenched compositional disorder and polar nanoregions (PNR), the phase transitions including compositio...

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confidence: 99%

“…The field of electronic materials is of extraordinary importance to technology and society given the pervasiveness of electronic devices in day-to-day life [1][2][3][4][5][6][7][8][9][10][11]. Particular areas of interest focus on material science and technologies of relevace to silicon processing technologies and future scaling approaches.…”

mentioning

confidence: 99%

Focuses of material science development in recent years

Jing

2011

Sci. China Technol. Sci.

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Megamaser detection and nuclear obscuration in Seyfert galaxies

Ramolla

Haas

Bennert

et al. 2011

A&A

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We revisit the relation between H 2 O maser detection rate and nuclear obscuration for a sample of 114 Seyfert galaxies, drawn from the CfA, 12µm and IRAS F25/F60 catalogs. These sources have mid-infrared spectra from the Spitzer Space Telescope and they are searched for X-ray and [O III] 5007Å fluxes from the literature. We use the strength of the [O IV] 25.9µm emission line as tracer for the intrinsic AGN strength. After normalization by [O IV] the observed X-ray flux provides information about X-ray absorption. The distribution of X-ray / [O IV] flux ratios is significantly different for masers and non-masers: The maser detected Seyfert-2s (Sy 1.8-2.0) populate a distinct X-ray / [O IV] range which is, on average, about a factor four lower than the range of Seyfert-2 non-masers and about a factor of ten lower than the range of Seyfert-1s (Sy 1.0-1.5). Non-masers are almost equally distributed over the entire X-ray / [O IV] range. This provides evidence that high nuclear obscuration plays a crucial role for the probability of maser detection. Furthermore, after normalization with [O IV], we find a similar but weaker trend for the distribution of the maser detection rate with the absorption of the 7 µm dust continuum. This suggests that the obscuration of the 7 µm continuum occurs on larger spatial scales than that of the X-rays. Hence, in the AGN unified model, at moderate deviation from edge-on, the 7 µm dust absorption may occur without proportionate X-ray absorption. The absorption of [O III] appears unrelated to maser detections. The failure to detect masers in obscured AGN is most likely due to insufficient observational sensitivity. 1 We denote as non-masers those AGN that have been observed at 22 GHz, but for which no megamaser was detected.

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H-Shaped copolymer ((His)PHEMA)2-b-PEG-b-(PHEMA(His))2 with histidine modified: Synthesis, characterization and its drug release study

Zhao

et al. 2015

Polym. Sci. Ser. B

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Deep levels, transport and THz emission properties of SiGe/Si quantum-well structures

Cited by 3 publications

References 10 publications

Focuses of material science development in recent years

Focuses of material science development in recent years

Megamaser detection and nuclear obscuration in Seyfert galaxies

H-Shaped copolymer ((His)PHEMA)2-b-PEG-b-(PHEMA(His))2 with histidine modified: Synthesis, characterization and its drug release study

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