Deep reactive ion etching of Pyrex glass

Li, X.; Abe, Takashi; Esashi, Masayoshi

doi:10.1109/memsys.2000.838528

Cited by 27 publications

(20 citation statements)

References 5 publications

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“…However, for thick films, with a thickness over 1 lm, this process was not so effective. The etching of thick ceramic films by plasma etching (Ref 23), inductively coupling plasma etching ( Ref 24,25), or reactive ion etching (Ref 26) is also difficult. For bulk PZT adhered to a Si membrane, it is difficult to ensure an adequate mechanical and electrical coupling between the films and to assemble complex structure.…”

Section: Introductionmentioning

confidence: 99%

Room Temperature Impact Consolidation (RTIC) of Fine Ceramic Powder by Aerosol Deposition Method and Applications to Microdevices

2008

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Ceramic integration technology requires downsizing and/or improvement of device performance in many applications, such as in the fabrication of microelectromechanical systems, display devises, fuel cells, optical devices, and RF components. For these applications, realization of high-speed deposition rate, low process temperature, and fine patterning in ceramic coating are very important. The aerosol deposition (AD) method has many advantages for above requirements in comparison with conventional thin-film method or thermal spray coating technology. In this article, advantages of the AD method are highlighted by realizing a comparison with conventional thin-film methods and thermal spray technology. Challenges associated with AD method are also highlighted. At the end, examples of integration of AD method in the fabrication of electronic components are also given to show the easiness in usage and in integration of this method in the device process flow.

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Section: Introductionmentioning

confidence: 99%

Room Temperature Impact Consolidation (RTIC) of Fine Ceramic Powder by Aerosol Deposition Method and Applications to Microdevices

2008

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“…Similar effects of ARDE were found in another study [23]. Li et al found that a narrower opening gave a more directional etch due to the build-up of non-volatile products on the sidewall [27].…”

Section: Aspect-ratio-dependent Etchingsupporting

confidence: 80%

“…For bias voltage, they found that increasing it led to a lower roughness and higher etch rate. Increasing the bias voltage increased ion bombardment [27]. This could come at a cost -the mask can become damaged and the accuracy of the patterned features can be compromised [23].…”

Section: Variation In Power Bias Voltage and Pressurementioning

confidence: 99%

Process Characterization of the Reactive-Ion Etching of Borosilicate Glass for Microfluidic Channels

Huang¹

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“…Isotropic gas etching of silicon using XeF 2 gas was also studied and combined with the deep RIE for precise micromachining [4]. Deep RIE processes of Pyrex glass [5], quartz [6,7], PZT (lead zirconium titanate) [7] and SiC (silicon carbide) [8] using thick nickel as a mask has been also studied. Pyrex glass could be etched through the thickness of 200µm.…”

Section: Deep Rie Processes and Their Applicationsmentioning

confidence: 99%

“…Pyrex glass could be etched through the thickness of 200µm. Vertical etch profile was obtained when the mask opening is narrower than 20 µm because the deposition of non volatile products on the side wall is reduced [5]. The hole made in a Pyrex glass can be used for an electrical feedthrough from a packaged sensor [9].…”

Section: Deep Rie Processes and Their Applicationsmentioning

confidence: 99%