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Atomically flat silicon surface constructed with atomic terraces and steps is realized by pure argon ambience annealing at 1200 o C on (100) crystal orientation large diameter wafers with precisely controlled tilt angle. Only the radical reaction based insulator formation technology such as oxidation utilizing oxygen radicals carried out at low temperature (400 o C) can preserve the atomically flatness at the gate insulator film/silicon interface. CMOSFET having the atomically flat interface exhibit extremely lower 1/f noise and higher mobility characteristics with smaller electrical variation than those of CMOSFETs fabricated by the conventional technologies.

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