Deep reactive ion etching of pyrex glass usingabonded silicon wafer as an etching mask

Akashi, T.; Yoshimura, Yasuhiro; Higashiyama, S.

doi:10.1109/memsys.2005.1453981

Cited by 4 publications

(4 citation statements)

References 7 publications

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“…Due to high energies, the selectivity of a standard photo-resist mask in the proposed Pyrex etch process is poor (about 1:2). A common way to overcome this is by using other materials such as silicon [4] or metal layers [5] as etch masks. Nevertheless, each of the above results in adding more fabrication steps, and cost to the fabrication process.…”

Section: Maskingmentioning

confidence: 99%

“…Moreover, in these methods it is not possible to have vertical sidewalls because of the etch mechanism. In order to overcome these two major drawbacks (accuracy and verticality), dry etch of deep cavities in Pyrex was presented ( [4,5]). Dry etch is accurate in the order of a few microns (as is the lithography accuracy) and can reach 90 • of verticality.…”

Section: Introductionmentioning

confidence: 99%

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Dry etching of deep cavities in Pyrex for MEMS applications using standard lithography

Baram

Naftali

2006

J. Micromech. Microeng.

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A reactive ion etching (RIE) process of Pyrex glass with a high etch rate is presented in this work, using standard lithography processes. This process enables us to create deep cavities with vertical side walls and with relatively high accuracy in Pyrex, with minimal additional process steps. An optimization of the etch process conducted using the design-of-experiment method to increase the etch rate results in an analytical model to describe the etch rate of the Pyrex. The etch rate which was optimized in this work was about 3500 A min−1 with a verticality of about 85°. Additionally, the implementation of deep cavities in Pyrex, in order to create a notch-free deep silicon etch, is presented. This is done by engineering the working material (i.e., silicon-on-glass wafer) by using Pyrex dry etch and by adding a thin metallic layer between the silicon and the Pyrex cavities.

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Section: Maskingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dry etching of deep cavities in Pyrex for MEMS applications using standard lithography

Baram

Naftali

2006

J. Micromech. Microeng.

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“…The method of utilizing single crystal Si as the mask for glass etching by bonding Si and glass wafers was reported in [6], but the process was complicated and costly. A PECVD amorphous silicon mask was investigated by C Iliescu et al and a very good result was achieved [7,8].…”

Section: Introductionmentioning

confidence: 99%

Application of PECVD SiC in glass micromachining

Zhang

Guo

Chen

et al. 2007

J. Micromech. Microeng.

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In this paper, we present an application of SiC for Pyrex glass micromachining in the MEMS fabrication process. SiC has very high etch resistance in most acid and alkaline solutions due to its chemical inertness. The PECVD (plasma-enhanced chemical vapor deposition) process allows deposition of SiC at a low temperature (200–400 °C), which makes SiC have better compatibility with IC fabrication. The PECVD SiC film was characterized and the process was optimized accordingly. An annealing process was developed to reduce the residual stress and modify the interface adhesion, and therefore the mask defects as well as the undercut of glass were reduced. In our experiment, an etch angle of 41° was achieved with an annealed SiC mask. Finally, microchannels on the glass substrate utilizing PECVD SiC mask were demonstrated, and SiC microstructures, such as membranes and clamed-clamed beams, were successfully fabricated by this micromachining technology.

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“…Deep reactive ion etching (DRIE) of Pyrex glass using sulfur hexafluoride plasma (SF6) and 20-ptm-thick electroplated nickel film as etch mask under condition of low pressure (0.2 Pa) and etch ratio ( 0.6ptm/min ) was reported to fabricate HAR microstructures [10]. In addition, using CHF3 plasma and a 135-ptm-thick silicon wafer bonded to a Pyrex-glass wafer as an etching mask by anodic bonding was applied to fabricate 1 x mm2 square and 430 ptm depth of deep groove under condition of low pressure and etch ratio ( 0.5ptm/min ) [11]. The two different mask materials of DRIE technology are low etching rate and high roughness of etched profiles.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of 3-D submicron glass structures by FIB

Chao

Pan

2007

2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems

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The fabrication characteristic of focused ion beam (FIB) for Pyrex glass was investigated. FIB has several advantages such as high sensitivity, high material removal rates, low forward scattering and direct fabrication in selective area without any etching mask, etc. In this study, FIB etched Pyrex glass was used for fast fabrication of 3-D submicron structures. A high aspect-ratio (HAR) glass structure of 5 (1.97gm depth/0.39gm width) was fabricated. The experimental results in terms of limiting beam size, ion dose (ion/cm2) , beam current, etc was discussed. The influence of XeF2 gas on FIB glass fabrication was investigated.

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Deep reactive ion etching of pyrex glass usingabonded silicon wafer as an etching mask

Cited by 4 publications

References 7 publications

Dry etching of deep cavities in Pyrex for MEMS applications using standard lithography

Dry etching of deep cavities in Pyrex for MEMS applications using standard lithography

Application of PECVD SiC in glass micromachining

Fabrication of 3-D submicron glass structures by FIB

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