A reactive ion etching (RIE) process of Pyrex glass with a high etch rate is presented in this work, using standard lithography processes. This process enables us to create deep cavities with vertical side walls and with relatively high accuracy in Pyrex, with minimal additional process steps. An optimization of the etch process conducted using the design-of-experiment method to increase the etch rate results in an analytical model to describe the etch rate of the Pyrex. The etch rate which was optimized in this work was about 3500 A min−1 with a verticality of about 85°. Additionally, the implementation of deep cavities in Pyrex, in order to create a notch-free deep silicon etch, is presented. This is done by engineering the working material (i.e., silicon-on-glass wafer) by using Pyrex dry etch and by adding a thin metallic layer between the silicon and the Pyrex cavities.

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