1997
DOI: 10.1116/1.589636
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Deep submicron resist profile simulation and characterization of electron beam lithography system for cell projection and direct writing

Abstract: Pattern matching, simulation, and metrology of complex layouts fabricated by electron beam lithography Proximity exposure effect analysis using the phenomenon of resist debris formation in electron beam lithography

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Cited by 13 publications
(3 citation statements)
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“…If we describe the sensitivity of the nanoparticle film by the threshold dose for production of exposed lines visible in the SEM, then a sensitivity of 80 mC cm −2 is derived. This value suggests that the nanoparticle film is about 600 times less sensitive in comparison with PMMA (quoted as 0.13 mC cm −2 ) [33]. However, this sensitivity lies at present within an order of magnitude or so of other high resolution negative tone electron beam resists, e.g.…”
Section: Fabrication Of Metallic Nanostructures By Direct Electron Be...mentioning
confidence: 87%
“…If we describe the sensitivity of the nanoparticle film by the threshold dose for production of exposed lines visible in the SEM, then a sensitivity of 80 mC cm −2 is derived. This value suggests that the nanoparticle film is about 600 times less sensitive in comparison with PMMA (quoted as 0.13 mC cm −2 ) [33]. However, this sensitivity lies at present within an order of magnitude or so of other high resolution negative tone electron beam resists, e.g.…”
Section: Fabrication Of Metallic Nanostructures By Direct Electron Be...mentioning
confidence: 87%
“…To ensure the release of replicated plastic chip from the mold chip fabricated by deep X-ray exposure and electroplating, the wall of the high aspect ratio channels should have a slight inclination. Since it is too difficult for the conventional LIGA technology, we adopted the M 2 DXL technology [Ham et al, 1997]. …”
Section: Micro Capillary Array Electrophoresis Chip 41mentioning
confidence: 99%
“…One possible approach is to fabricate a special X-ray mask with inclined absorber. Nevertheless, this method has been proved very limited [Ham et al, 1997]. We once proposed M 2 DXL (Moving Mask Deep X-ray Lithography) technology to control the wall inclination of a microstructure by LIGA process [Tabata et al, 1999].…”
Section: Introductionmentioning
confidence: 99%