Deep traps and temperature effects on the capacitance of p-type Si-doped GaAs Schottky diodes on (211) and (311) oriented GaAs substrates

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique

“…As seen in table 1, only one hole trap, H1 PN , is detected in PN devices. It has an energy close to that measured from Laplace DLTS by Boumaraf et al [39] in a p-type Si-doped GaAs Schottky diode. Although the origin of this defect is not yet clear, they suggested that it could be related to complexes involving silicon atoms, background impurities, and defects originating from the growth conditions used.…”

Modeling a Ni/β-Ga2O3 Schottky barrier diode deposited by confined magnetic-field-based sputtering

“…where ψ is the electrostatic potential, ε is the permittivity, p and n are free holes and electron concentrations respectively, and N ± t is the ionized trap density (cm −3 ). Secondly, continuity equations for electrons and holes, defined for steady states by [18,19]:…”

“…where G n and G p are the generation rates for electrons and holes, R n and R p are the recombination rate for electrons and holes, ⃗ J n and ⃗ J p are the electron and hole current densities, given in terms of quasi-Fermi levels (ϕ n and ϕ p ) and mobilities (µ n and µ p ) as [18,19]:…”

Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study

“…Among III-V materials, AlGaAs/GaAs heterostructures have gained much importance. This is due to the variety of their applications in multitude fields and operation under several conditions (temperature, frequency, voltage) [1,2]. That is why the elaboration mastery of such structures has a crucial role in the realization of essential smart electronic devices for the consumer electronics and optoelectronics market [3][4][5].…”