Deep traps in GaN-based structures as affecting the performance of GaN devices

Polyakov, A. Y.; Lee, In-Hwan

doi:10.1016/j.mser.2015.05.001

Cited by 213 publications

(198 citation statements)

References 366 publications

(917 reference statements)

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“…This indicates that nearly identical trap states are present in both SD Samples A and B. In comparison with published data, the traps with activation energies in the 0.6-0.8 eV range are usually found to be located in the GaN buffer near the AlGaN/GaN interface [24], and, in the 0.8-0.85 eV range, the dominant traps might be attributed to defects mainly associated with dislocations as commonly observed in MOCVD-grown of undoped and Fe-doped GaN layers [1]. From these results, one can assume that the trap states in the investigated SDs are connected predominantly with the GaN buffer near the AlGaN/GaN interface defects associated with dislocations.…”

Section: Resultssupporting

confidence: 57%

“…Measurement was performed in a temperature range between 25 and 150˝C using a heated plate and an ATT Systems A150 temperature controller. (e.g., [14,17,20,21]) and between 0.71 and 0.82 eV (e.g., [1,9,19,[22][23][24]) were the most commonly reported. Unfortunately, their origin remains ambiguous.…”

Section: Methodsmentioning

confidence: 99%

“…Although such devices are commercially produced, their reliability problems caused by trap-related effects are still under investigation [1,2]. The existence of defects can result from surface states, point defects, and threading dislocations in the AlGaN/GaN material structure.…”

Section: Introductionmentioning

confidence: 99%

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Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

et al. 2016

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Trapping effects on two AlGaN/GaN Schottky diodes with a different composition of the AlGaN barrier layer were analyzed by current transient spectroscopy. The current transients were measured at a constant bias and at six different temperatures between 25 and 150˝C. Obtained data were fitted by only three superimposed exponentials, and good agreement between the experimental and fitted data was achieved. The activation energy of dominant traps in the investigated structures was found to be within 0.77-0.83 eV. This nearly identical activation energy was obtained from current transients measured at a reverse bias of´6 V as well as at a forward bias of+1 V. It indicates that the dominant traps might be attributed to defects mainly associated with dislocations connected predominantly with the GaN buffer near the AlGaN/GaN interface.

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Section: Resultssupporting

confidence: 57%

Section: Methodsmentioning

confidence: 99%

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Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

et al. 2016

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“…2,[136][137][138][139][140][141][142][143][144][145][146][147][148][149][150][151][152][153][154] The majority of deep electron traps in GaN are most likely dislocation-related and that probably explains the prominent role of dislocations in the trapping, gate leakage, subthreshold current leakage, and degradation in AlGaN/GaN HEMTs. The gate leakage in AlGaN/GaN HEMTs seems to be promoted by open-core screw dislocations and, in InAlN/GaN Q48…”

Section: Changes In Gan-based Hemt Performance After Irradiationmentioning

confidence: 99%

“…[1][2][3][4] The strong bonding in binary and ternary nitrides gives them an intrinsically high radiation resistance. The fluence of ionizing radiation at which GaN materials and devices such as transistors and light-emitting diodes start to show degradation is about two orders of magnitude higher than in their GaAs equivalents.…”

mentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

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282

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Achieving Zero‐Temperature Coefficient Point Behavior by Defect Passivation for Temperature‐Immune Organic Field‐Effect Transistors

Qi,

Tie,

et al. 2024

Advanced Materials

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Organic field‐effect transistors (OFETs) have broad prospects in biomedical, sensor, and aerospace applications. However, obtaining temperature‐immune OFETs is difficult because the electrical properties of organic semiconductors (OSCs) are temperature‐sensitive. The zero‐temperature coefficient (ZTC) point behavior can be used to achieve a temperature‐immune output current; however, it is difficult to achieve in organic devices with thermal activation characteristics, according to the existing ZTC point theory. Here, we eliminate the Fermi pinning in OSCs using the defect passivation strategy, making the Fermi level closer to the tail state at low temperatures; thus threshold voltage (VT) is negatively correlated with temperature. ZTC‐point behaviors in OFETs are achieved by compensation between VT and mobility at different temperatures to improve its A temperature‐immune output current can be realized in a variable‐temperature bias voltage test over 50000 s by biasing the device at the ZTC point. This study provides an effective solution for temperature‐immune OFETs and inspiration for their practical application.This article is protected by copyright. All rights reserved

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Deep traps in GaN-based structures as affecting the performance of GaN devices

Cited by 213 publications

References 366 publications

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

Review—Ionizing Radiation Damage Effects on GaN Devices

Achieving Zero‐Temperature Coefficient Point Behavior by Defect Passivation for Temperature‐Immune Organic Field‐Effect Transistors

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